Electronic Micro-Fabrication of Chalcogenide Glass

Author(s):  
Keiji Tanaka
Author(s):  
T. Ichinokawa ◽  
H. Maeda

I. IntroductionThermionic electron gun with the Wehnelt grid is popularly used in the electron microscopy and electron beam micro-fabrication. It is well known that this gun could get the ideal brightness caluculated from the Lengumier and Richardson equations under the optimum condition. However, the design and ajustment to the optimum condition is not so easy. The gun has following properties with respect to the Wehnelt bias; (1) The maximum brightness is got only in the optimum bias. (2) In the larger bias than the optimum, the brightness decreases with increasing the bias voltage on account of the space charge effect. (3) In the smaller bias than the optimum, the brightness decreases with bias voltage on account of spreading of the cross over spot due to the aberrations of the electrostatic immersion lens.In the present experiment, a new type electron gun with the electrostatic and electromagnetic lens is designed, and its properties are examined experimentally.


2021 ◽  
Vol 119 (3) ◽  
pp. 031104
Author(s):  
M. Ramos ◽  
V. Bharadwaj ◽  
B. Sotillo ◽  
B. Gholipour ◽  
A. N. Giakoumaki ◽  
...  

2021 ◽  
Vol 608 ◽  
pp. 412745
Author(s):  
Mohamed N. Abd-el Salam ◽  
E.R. Shaaban ◽  
F. Benabdallah ◽  
Abdelwahab M.A. Hussein ◽  
Mansour Mohamed

2021 ◽  
Vol 2 (1) ◽  
pp. 95
Author(s):  
Luca Dassi ◽  
Marco Merola ◽  
Eleonora Riva ◽  
Angelo Santalucia ◽  
Andrea Venturelli ◽  
...  

The current miniaturization trend in the market of inertial microsystems is leading to movable device parts with sizes comparable to the characteristic length-scale of the polycrystalline silicon film morphology. The relevant output of micro electro-mechanical systems (MEMS) is thus more and more affected by a scattering, induced by features resulting from the micro-fabrication process. We recently proposed an on-chip testing device, specifically designed to enhance the aforementioned scattering in compliance with fabrication constraints. We proved that the experimentally measured scattering cannot be described by allowing only for the morphology-affected mechanical properties of the silicon films, and etch defects must be properly accounted for too. In this work, we discuss a fully stochastic framework allowing for the local fluctuations of the stiffness and of the etch-affected geometry of the silicon film. The provided semi-analytical solution is shown to catch efficiently the measured scattering in the C-V plots collected through the test structure. This approach opens up the possibility to learn on-line specific features of the devices, and to reduce the time required for their calibration.


Author(s):  
Yiqing Xia ◽  
Bing Yuan ◽  
Ozgur Gulbiten ◽  
Bruce Aitken ◽  
Sabyasachi Sen

2016 ◽  
Vol 42 (2) ◽  
pp. 172-176 ◽  
Author(s):  
Yu. S. Tveryanovich ◽  
S. V. Fokina ◽  
A. V. Kurochkin ◽  
E. N. Borisov ◽  
M. G. Krzhizhanovskaya ◽  
...  

2013 ◽  
Vol 52 (7) ◽  
pp. 1377 ◽  
Author(s):  
Itsunari Yamada ◽  
Naoto Yamashita ◽  
Toshihiko Einishi ◽  
Mitsunori Saito ◽  
Kouhei Fukumi ◽  
...  

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