A Technological Review on Temperature Measurement Techniques in Various Machining Processes

Author(s):  
Vineet Dubey ◽  
Anuj Kumar Sharma ◽  
Rabesh Kumar Singh
2018 ◽  
Vol 102 (19) ◽  
pp. 8525-8536 ◽  
Author(s):  
Anastasiia V. Krivoruchko ◽  
Anastasia Yu Iziumova ◽  
Maria S. Kuyukina ◽  
Oleg A. Plekhov ◽  
Oleg B. Naimark ◽  
...  

Author(s):  
Kil-Mo Koo ◽  
Kwang-Soon Ha ◽  
Rae-Joon Park ◽  
Sang-Baik Kim ◽  
Hee-Dong Kim ◽  
...  

The temperature measurement of a very high temperature core melt is of importance in LAVA (lower-plenum Arrested Vessel Attack) experiment in which gap formation between core melt and the reactor lower head, and the effect of the gap on thermal behavior are to be measured. The existing temperature measurement techniques have some problems, where the thermocouple, one of the contact methods, is restricted to under 2000°C, and the infrared thermometry, one of the non-contact methods, is unable to measure an internal temperature and very sensitive to the interference from reacted gases. So, in order to solve these problems, the delay time of ultrasonic wavelets due to high temperature is suggested. One of the key initial conditions to be measured in LAVA is the initial corium melt temperature. To measure it, the LAVA measurement group has developed several kinds of UTS’s. As a first stage, a molten material temperature was measured up to 2314°C. Also, the optimization design of the UTS (ultrasonic temperature sensor) with persistence at the high temperature was suggested in this paper. And the utilization of the theory suggested in this paper and the efficiency of the developed system are certified by performing experiments.


Author(s):  
P.J.T. Conradie ◽  
G.A. Oosthuizen ◽  
N.F. Treurnicht ◽  
A. Al Shaalane

2005 ◽  
Author(s):  
D. J. Frankman ◽  
B. W. Webb ◽  
M. R. Jones

A major obstacle to the widespread implementation of Rapid Thermal Processing (RTP) is the challenge of wafer temperature measurement. Frequently, lightpipe radiation thermometers are used to measure wafer temperatures in RTP reactors. While the lightpipe distorts the wafer temperature profile less than temperature measurement techniques which require physical contact, the presence of the lightpipe influences the wafer temperature profile. This paper presents the results of a theoretical study exploring that influence. The coupled radiation/conduction transport in the lightpipe enclosure is solved numerically. Radiation transfer in the system is modeled with varying levels of rigor, ranging from a simple volumetrically non-participating treatment to a full spectral solution of the Radiative Transfer Equation. The results reveal a rather significant effect of the lightpipe on the wafer temperature, which depends on the separation between the lightpipe tip and the wafer. The study illustrates clearly the need to model the lightpipe as a volumetrically participating, semitransparent medium, and further, the importance of accounting for spectral variation of the lightpipe properties in the prediction of the radiative transfer. Finally, two primary mechanisms are identified by which the lightpipe affects the wafer temperature distribution.


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