High-Performance Current Mirror-Based Voltage-Controlled Oscillator for Implantable Devices

2021 ◽  
pp. 339-350
Author(s):  
Pritty ◽  
Mansi Jhamb
Keyword(s):  
High Performance ◽  
Implantable Devices ◽  
Voltage Controlled Oscillator ◽  
Current Mirror

A low voltage low power high performance FGMOS based current mirror

2017 ◽  
Vol 10 ◽  
pp. 263-271 ◽  
Author(s):  
Charu Rana ◽  
Neelofer Afzal ◽  
Dinesh Prasad
Keyword(s):  
Low Power ◽  
High Performance ◽  
Low Voltage ◽  
Current Mirror

scholarly journals Integrated VCOs for Medical Implant Transceivers

VLSI Design ◽  
2008 ◽  
Vol 2008 ◽  
pp. 1-10 ◽  
Author(s):  
Ahmet Tekin ◽  
Mehmet R. Yuce ◽  
Wentai Liu
Keyword(s):  
Data Transfer ◽  
Supply Voltage ◽  
Low Frequency ◽  
Federal Communication Commission ◽  
Implantable Devices ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Medical Implant ◽  
Shift Keying ◽  
Lc Tank

The 402–405 MHz medical implant communication service (MICS) band has recently been allocated by the US Federal Communication Commission (FCC) with the potential to replace the low-frequency inductive coupling techniques in implantable devices. This band was particularly chosen to provide full-integration, low-power, faster data transfer, and longer communication range. This paper investigates the design of a voltage-controlled oscillator (VCO) that will be an essential building block of such wireless implantable devices operating in the MICS service band. Three different integrated quadrature VCOs that meet the requirements of the MICS standard are designed in 0.18 μm TSMC CMOS process to propose an optimum choice. Their performances in terms of power consumption, die area, linearity, and phase noise are compared. The fabricated VCOs are a four-stage differential ring VCO, an LC tank VCO directly loaded with a poly-phase filter, and an 800 MHz LC tank VCO with a high-frequency master-slave divider. All three architectures target a VCO gain of Kvco = 15 MHz/V with 3 calibration control and 2 frequency-shift keying (FSK) control signals and are designed for 1.5 V supply voltage in a 0.18-μm standard CMOS process.

A very high performance compact CMOS current mirror

2014 ◽  
Vol 81 (2) ◽  
pp. 367-375 ◽  
Author(s):  
Bhawna Aggarwal ◽  
Maneesha Gupta ◽  
Anil Kumar Gupta ◽  
Sahil Bansal
Keyword(s):  
High Performance ◽  
Current Mirror ◽  
Very High

Compact implementation of high-performance CMOS current mirror

2005 ◽  
Vol 41 (10) ◽  
pp. 570 ◽  
Author(s):  
J. Ramirez-Angulo ◽  
M.S. Sawant ◽  
A. López-Martín ◽  
R.G. Carvajal
Keyword(s):  
High Performance ◽  
Current Mirror
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