Electrical properties of sol-gel processed PLZT thin films

1994 ◽  
Vol 29 (24) ◽  
pp. 6599-6603 ◽  
Author(s):  
J. M. Kim ◽  
D. S. Yoon ◽  
K. No
1991 ◽  
Author(s):  
T. Okudaira ◽  
A. Hachisuka ◽  
N. Soyama ◽  
K. Ogi ◽  
H. Arima ◽  
...  

2021 ◽  
Vol 126 ◽  
pp. 105648
Author(s):  
Edgar R. López-Mena ◽  
Sergio J. Jiménez-Sandoval ◽  
Omar Jiménez-Sandoval

2015 ◽  
Vol 76 (1) ◽  
pp. 220-226 ◽  
Author(s):  
Dongfang Chen ◽  
Shengli Huang ◽  
Jianguo Chen ◽  
Jinrong Cheng

2010 ◽  
Vol 22 (6) ◽  
pp. 666-671 ◽  
Author(s):  
Si-Jia Liu ◽  
Hua Wang ◽  
Ji-Wen Xu ◽  
Ming-Fang Ren ◽  
Ling Yang ◽  
...  

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.


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