The role of drying-control chemical additives on the preparation of sol-gel derived PLZT thin films

1993 ◽  
Vol 28 (24) ◽  
pp. 6691-6698 ◽  
Author(s):  
De -An Chang ◽  
Yi -Hung Choh ◽  
Wen -Feng Hsieh ◽  
Pang Lin ◽  
Tseung -Yuen Tseng
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Chemical Additives ◽  
Control Chemical ◽  
Plzt Thin Films

Critical phenomena and phase transition in SOL-GEL derived ferroelectric PLZT thin films

1994 ◽  
Vol 157 (1) ◽  
pp. 347-352 ◽  
Author(s):  
Chianping Ye ◽  
Paul Baude ◽  
Dennis L. Polla
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Critical Phenomena ◽  
Sol Gel ◽  
Plzt Thin Films

scholarly journals Enhancement the Sensitivity of waveguide Coated ZnO thin films: Role of Plasma Irradiation

2020 ◽  
Vol sceeer (3d) ◽  
pp. 93-98
Author(s):  
Marwan Younus ◽  
Muayad Ahmed ◽  
Ghazwan Ali
Keyword(s):  
Thin Films ◽  
Glucose Solution ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Dielectric Barrier Discharge Plasma ◽  
Dbd Plasma ◽  
Plasma Irradiation ◽  
Before And After ◽  
Barrier Discharge Plasma

In this study, Dielectric Barrier Discharge plasma irradiation (DBD) is applied to treatment and improve the properties of the ZnO thin film deposited on the glass substrate as a sensor for glucose detection. The ZnO is prepared via a sol-gel method in this work. ZnO is irradiated by the DBD high voltage plasma to improve of its sensitivity. The optical properties, roughness and surface morphology of the waveguide coated ZnO thin films before and after DBD plasma irradiation are studied in this work. The results showed a significant improvement in the performance of the sensor in the detection of concentrations of glucose solution after plasma irradiation. Where the largest value in sensitivity was equal to 62.7 when the distance between electrodes was 5 cm compared to the sensitivity before irradiation, which was equal to 92. The high response showed in results demonstrating that the fabricated waveguide coated ZnO after plasma irradiation has the excellent potential application as a sensor to detect small concentration of glucose solution.

Preparation and characterization of PLZT thin films by sol-gel processing

1996 ◽  
Vol 31 (23) ◽  
pp. 6361-6368 ◽  
Author(s):  
Yu -Fu Kuo ◽  
Tseung -Yuen Tseng
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Plzt Thin Films ◽  
Gel Processing

Electro-optic properties of sol-gel derived PZT and PLZT thin films

1995 ◽  
Vol 29 (1-4) ◽  
pp. 327-330 ◽  
Author(s):  
G. Teowee ◽  
J.T. Simpson ◽  
Tianji Zhao ◽  
M. Mansuripur ◽  
J.M. Boulton ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Electro Optic ◽  
Plzt Thin Films

Electrical properties of sol-gel processed PLZT thin films

1994 ◽  
Vol 29 (24) ◽  
pp. 6599-6603 ◽  
Author(s):  
J. M. Kim ◽  
D. S. Yoon ◽  
K. No
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Plzt Thin Films

Epitaxial growth of sol-gel PLZT thin films

1994 ◽  
Vol 9 (2) ◽  
pp. 420-425 ◽  
Author(s):  
Dae Sung Yoon ◽  
Chang Jung Kim ◽  
Joon Sung Lee ◽  
Won Jong Lee ◽  
Kwangsoo No
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Lead Lanthanum Zirconate Titanate ◽  
Lanthanum Zirconate ◽  
Heat Treated ◽  
Pole Figures ◽  
Insertion Method ◽  
Plzt Thin Films ◽  
Organic Solutions

Epitaxial lead lanthanum zirconate titanate [PLZT(9/50/50)] thin films were fabricated on various single crystal substrates using the spin coating of metallo-organic solutions. The films were heat-treated at 700 °C for 1 h using the direct insertion method. The films were epitaxially grown with (100), (100), and (110) being parallel to the SrTiO3(100), the MgO(100), and the sapphire (0112) substrates, respectively. The epitaxy of the films was investigated using x-ray diffraction, pole figures, rocking curves, and scanning electron microscopy.

Role of film thickness on the properties of ZnO thin films grown by sol-gel method

2013 ◽  
Vol 539 ◽  
pp. 161-165 ◽  
Author(s):  
Vinod Kumar ◽  
Neetu Singh ◽  
R.M. Mehra ◽  
Avinashi Kapoor ◽  
L.P. Purohit ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Method ◽  
Sol Gel Method

Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Chi Kong Kwok ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vacancy Concentration ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Low Oxygen ◽  
Partial Pressures ◽  
Pzt Films

AbstractThe properties of ferroelectric thin films can be significantly influenced by the presence of point defects. The concentration of vacancies presented in these thin films is known to be one of the key parameters causing the degradation of these films when these films are subjected to polarization reversals.To study the effects of the vacancy concentration on the ferroelectric properties, sol gel PZT films and powders were annealed in different oxygen partial pressures. For the PZT films, the reduction of oxides to pure metals was not observed even with films annealed at 2×10−5 atmosphere of oxygen partial pressure. Samples annealed at low oxygen partial pressure (for instance, 10−3 and 2×10−5 atmosphere), which has more Pb and O2 depletions and consequently has more Pb and O2 vacancies, cannot be switched easily. The ratios of coercive field after and before fatigue increase as the defect concentrations of the annealed samples increase.

Growth of nanotubes in sol-gel-derived V2O5 powders and films prepared under acidic conditions

2009 ◽  
Vol 24 (2) ◽  
pp. 475-481 ◽  
Author(s):  
R. Ceccato ◽  
S. Dirè ◽  
T. Barone ◽  
G. De Santo ◽  
E. Cazzanelli
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Structural Evolution ◽  
Nanocrystalline Phase ◽  
X Ray Diffraction ◽  
Α Phase ◽  
Heat Treated ◽  
Acidic Conditions ◽  
Hydrolysis Conditions

The structural evolution with temperature of some V2O5 gels and thin films is presented, and the role of the hydrolysis conditions is investigated. Several techniques, i.e., x-ray diffraction, differential thermal analysis, infrared, and temperature-dependent Raman spectroscopy, have been used to follow the thermal behavior of the samples. When the bulk xerogels begin to change from a nanocrystalline phase to the orthorhombic α-V2O5, in the temperature range 280 to 300 °C, a growth of vanadium oxide nanotubes also occurs, while at higher temperatures the crystallization into the α phase prevails. A slightly different evolution is observed for heat treated thin films, which show a structure containing polyvanadate chains near room temperature. They also present a growth of nanotubes for intermediate temperatures and a complete crystallization into the α phase when the temperature is further increased.

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