Preparation and characterization of PLZT thin films by sol-gel processing

1996 ◽  
Vol 31 (23) ◽  
pp. 6361-6368 ◽  
Author(s):  
Yu -Fu Kuo ◽  
Tseung -Yuen Tseng
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Plzt Thin Films ◽  
Gel Processing

Structural, morphological, and magnetic characterization of bulk and thin films Y3Al5–xFexO12 (YAIG): From the perspective of aqueous sol–gel processing

2017 ◽  
Vol 204 (9) ◽  
pp. 1037-1048 ◽  
Author(s):  
Olga Opuchovic ◽  
Serdar Culunlu ◽  
Ayse Uztetik Morkan ◽  
Izzet Amour Morkan ◽  
Daniel Niznansky ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Magnetic Characterization ◽  
Gel Processing

Characterization of (Pb, La)TiO3 thin films prepared by sol—gel processing

1995 ◽  
Vol 49 (3) ◽  
pp. 187-190 ◽  
Author(s):  
Wang Peiying ◽  
Liu Meidong ◽  
Rao Yunhua ◽  
Zeng Yike ◽  
Ji Nan
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing

Sol‐Gel Processing and Characterization of Silica Thin Films for on Chip Humidity Sensors

1996 ◽  
Vol 446 ◽  
Author(s):  
J.R. Kokan ◽  
R.A. Gerhardt
Keyword(s):  
Thin Films ◽  
Colloidal Silica ◽  
Sol Gel ◽  
High Sensitivity ◽  
Silica Thin Films ◽  
Highly Sensitive ◽  
On Chip ◽  
Gel Processing ◽  
Highly Porous

AbstractSilica thin films have been processed via a colloidal sol‐gel method which involves the hydrolyzing of potassium silicate and colloidal silica sol using formamide[l]. The resulting films are highly porous. The processing leaves residual potassium and sodium in the films which can then be removed through leaching in water. The dielectric properties of films which have been leached for twenty minutes are nearly insensitive to humidity. However, partially leached films, or films which have been doped with LiCl, KC1, or NaCl, are highly sensitive to humidity changes. The range of humidities over which these films have high sensitivity can be modified by changing the dopant type or varying the doping level. Films can be made to sense humidities ranging from 20% to 80% reproducibly. These films are ideal for microelectronic applications because they can be processed via dipping as well as spin coating and can also be easily etched.

PREPARATION AND STRUCTURE CHARACTERIZATION OF BiFeO3-SrBi2Nb2O9 THIN FILMS ON SILICON BY SOL-GEL PROCESSING

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4455-4459
Author(s):  
HAOSHUANG GU ◽  
WANQIANG CAO ◽  
JUNMIN XUE ◽  
JOHN WANG
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Precursor Solution ◽  
Monomethyl Ether ◽  
Structure Characterization ◽  
Layered Perovskite ◽  
Heat Treated ◽  
Average Grain Size ◽  
Gel Processing

A new system 0.1 BiFeO 3-0.9 SrBi 2 Nb 2 O 9 thin films have been successfully prepared by an ethanolamine-modified sol-gel technique. The precursor solution was synthesized from compounds, Bi(NO 3)3· 5H 2 O , Sr(NO 3)2, Fe(NO 3)3· 9H 2 O and Nb(OC 2 H 5)5 in solution ethylene glycol monomethyl ether. The thin films were deposited on Si single crystal by spinning coating, and heat-treated at temperatures ranging from 400°C to 700°C. Crystallization of thin films occurred at about 500 ~ 600°C and the films exhibit a pure phase of layered perovskite ferroelectric structure. The grain of films is well distributed and the average grain size of the film is about 100nm.

Characterization of TiO2 Thin Films Prepared by Sol-Gel Processing

2004 ◽  
Vol 264-268 ◽  
pp. 505-508 ◽  
Author(s):  
M. Özenbaş ◽  
Ö. Kaya
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing

Sol-gel processing of composite PbTiO3/PLZT thin films

1990 ◽  
Vol 108 (1) ◽  
pp. 71-76 ◽  
Author(s):  
S. L. Swartz ◽  
S. J. Bright ◽  
P. J. Melling ◽  
T. R. Shrout
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Plzt Thin Films ◽  
Gel Processing

Sol-gel processing of PLZT thin films

1995 ◽  
Vol 6 (1-4) ◽  
pp. 129-140 ◽  
Author(s):  
M. Sedlar ◽  
L. Zou ◽  
M. Sayer
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Plzt Thin Films ◽  
Gel Processing

Preparation and characterization of highly (111)-oriented (Pb,La)(Zr,Ti)O3 thin films by sol–gel processing

2003 ◽  
Vol 423 (1) ◽  
pp. 13-17 ◽  
Author(s):  
X.G Tang ◽  
A.L Ding ◽  
Y Ye ◽  
W.X Chen
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing

Studies on the Preparation and Characterization of Ferroelectric PLZT Film Capacitors

2011 ◽  
Vol 110-116 ◽  
pp. 5483-5486
Author(s):  
Li Liu ◽  
Hua Wang ◽  
Ji Wen Xu ◽  
Ming Fang Ren ◽  
Ling Yang
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Plzt Thin Films ◽  
Coercive Electric Field

(Pb0.92La0.08)(Zr0.65Ti0.35) O3(PLZT) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrates to create transparent capacitor by the sol-gel method following annealing process. X-ray diffraction analysis shows that the PLZT thin films are polycrystalline with a single perovskite phase at 650°C. The ferroelectric, electrical and optical properties of these films were investigated in detail as a function of annealing temperature. Measurements with the PLZT films annealed at 650°C yielded the following: relative permittivity≈775 and dielectric loss (tanδ) ≈0.054, leakage current of 7.1× 10-9A, and remanent polarization of 38 μC/cm2 and the coercive electric field of 55 kV/cm and transparency of 88%. The pure perovskite films exhibit better properties than those films which have some fraction of pyrochlore phase.

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