OSIE standard means of measuring pulsed laser emission

1983 ◽  
Vol 26 (9) ◽  
pp. 756-759
Author(s):  
Ya. T. Zagorskii ◽  
A. F. Kotyuk ◽  
A. A. Kuznetsov ◽  
A. M. Levi

1983 ◽  
Vol 26 (9) ◽  
pp. 753-756
Author(s):  
A. F. Kotyuk ◽  
Ya. T. Zagorskii ◽  
A. A. Kuznetsov ◽  
M. V. Ulanovskii


1986 ◽  
Vol 7 (1) ◽  
pp. 39-45
Author(s):  
M. L. Kozachenko ◽  
N. P. Khatyrev ◽  
V. A. Yakovlev


1968 ◽  
Vol 9 (5) ◽  
pp. 1215-1217
Author(s):  
N. A. Borisevich ◽  
M. V. Dubovik ◽  
A. Ya. Smirnov
Keyword(s):  




1992 ◽  
Vol 281 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
Y. Lansari ◽  
K. J. Gossett ◽  
B. Sneed ◽  
...  

ABSTRACTProperties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.



1988 ◽  
Vol 24 (17) ◽  
pp. 1104 ◽  
Author(s):  
L. Esterowitz ◽  
R. Allen ◽  
I. Aggarwal
Keyword(s):  


1968 ◽  
Vol 9 (6) ◽  
pp. 1215-1217
Author(s):  
N. A. Borisevich ◽  
M. V. Dubovik ◽  
A. Ya. Smirnov
Keyword(s):  


2000 ◽  
Vol 648 ◽  
Author(s):  
R. K. Thareja ◽  
A. Mitra ◽  
V. Ganesan ◽  
A. Gupta ◽  
P. K. Sahoo ◽  
...  

AbstractWe report on random laser emission in pulsed laser deposited nanocrystalline ZnO thin films. The deposition was done on silicon and glass substrates in ambient oxygen pressure ranging from 10 mTorr to 1 Torr at room temperature. The deposited films were characterized using XRD, RBS, PL and AFM. The films grown at pressures less than 300 mTorr are found to be preferentially oriented along (002) plane. Morphology of the films deposited at different background pressures showed that the films deposited at lower pressures are significantly smoother than those at higher back ground pressure. PL intensity depends on the stoichiometry of the films and hence on oxygen pressure. Laser action was observed on optically pumping the films with 355 nm radiation. At excitation intensity above threshold, very narrow peaks are observed in the emission spectrum. The dependence of the laser emission on the size of nanocrystallites at different pressures of the ambient gas is presented.





1967 ◽  
Vol 3 (4) ◽  
pp. 170-170 ◽  
Author(s):  
L. Mathias ◽  
A. Crocker ◽  
M. Wills
Keyword(s):  


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