Blue Lasers Based on II-VI Semiconductor Heterostructures

ABSTRACTProperties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.

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Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004002 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 1-7 ◽

Cited By ~ 1

Author(s):

Masayoshi Koike ◽

Shiro Yamasaki ◽

Yuta Tezen ◽

Seiji Nagai ◽

Sho Iwayama ◽

...

Keyword(s):

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Threshold Current ◽

Crystal Defects ◽

Blue Laser ◽

Buffer Layers ◽

Continuous Wave Laser ◽

Cw Operation ◽

First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

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Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers

MRS Proceedings ◽

10.1557/proc-595-f99w1.2 ◽

1999 ◽

Vol 595 ◽

Author(s):

Masayoshi Koike ◽

Shiro Yamasaki ◽

Yuta Tezen ◽

Seiji Nagai ◽

Sho Iwayama ◽

...

Keyword(s):

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Threshold Current ◽

Crystal Defects ◽

Blue Laser ◽

Buffer Layers ◽

Continuous Wave Laser ◽

Cw Operation ◽

First Time

AbstractGaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

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GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

Journal of Semiconductors ◽

10.1088/1674-4926/42/11/112801 ◽

2021 ◽

Vol 42 (11) ◽

pp. 112801

Author(s):

Feng Liang ◽

Degang Zhao ◽

Zongshun Liu ◽

Ping Chen ◽

Jing Yang ◽

...

Keyword(s):

Laser Diode ◽

Room Temperature ◽

Continuous Wave ◽

Chemical Vapor ◽

Threshold Current ◽

Stimulated Emission ◽

Blue Laser ◽

Organic Chemical ◽

Blue Laser Diode ◽

Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

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Power scaling of continuous-wave visible Pr3+:YLF laser end-pumped by high power blue laser diodes

Laser Congress 2017 (ASSL, LAC) ◽

10.1364/assl.2017.atu1a.3 ◽

2017 ◽

Author(s):

Hiroki Tanaka ◽

Fumihiko Kannari

Keyword(s):

High Power ◽

Continuous Wave ◽

Laser Diodes ◽

Blue Laser ◽

Power Scaling

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ROLE OF DISLOCATIONS IN InGaN-BASED LEDs AND LASER DIODES

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156400000301 ◽

2000 ◽

Vol 10 (01) ◽

pp. 271-279 ◽

Cited By ~ 2

Author(s):

SHUJI NAKAMURA

Keyword(s):

Quantum Well ◽

Output Power ◽

Continuous Wave ◽

Laser Diodes ◽

Transverse Mode ◽

High Current ◽

Single Quantum Well ◽

Cw Operation ◽

Current Operation ◽

Composition Fluctuations

UV InGaN and GaN single-quantum-well structure light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown (ELOG) and sapphire substrates. When the emission wavelength of UV InGaN LEDs was shorter than 380 nm, the external quantum efficiency (EQE) of the LED on ELOG was much higher than that on sapphire only at high-current operation. At low-current operation, both LEDs had the same EQE. When the active layer was GaN, EQE of the LED on sapphire was much lower than that on ELOG at both low- and high-current operation due to the lack of localized energy states formed by In composition fluctuations. In order to improve the lifetime of laser diodes (LDs), ELOG had to be used because the operating current density of the LDs is much higher than that of LEDs. A violet InGaN multi-quantum-well GaN/AlGaN separate-confinement-heterostructure LD was grown on ELOG on sapphire. The LDs with cleaved mirror facets shows an output power as high as 40 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed at an output power of up to 40 mW. The estimated lifetime of the LDs at a constant output power of 10 mW was more than 2,000 hours under CW operation at an ambient temperature of 60°C.

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Blue Laser Diodes by Low Temperature Plasma Assisted MBE

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.140.17 ◽

2008 ◽

Vol 140 ◽

pp. 17-26 ◽

Cited By ~ 2

Author(s):

Czeslaw Skierbiszewski

Keyword(s):

Continuous Wave ◽

Laser Diodes ◽

Plasma Source ◽

Blue Laser ◽

Rf Plasma ◽

Threading Dislocation ◽

Temperature Plasma ◽

Threading Dislocation Density ◽

Bulk Gan ◽

New Perspective

Recent progress in the growth of nitride based semiconductor structures made by plasma assisted MBE (PAMBE) is reported. The technology is ammonia free and the nitrogen for growth is activated by an RF plasma source from nitrogen molecules. A new approach for the growth of nitrides by PAMBE at temperature range 500 - 600°C is described. The key for this technique is to use a thin, dynamically stable metal (In or Ga) layer on the (0001) GaN surface, which enables a high quality 2D step-flow growth mode to be achieved at temperatures much lower than those determined by thermodynamic considerations. A new perspective for PAMBE in optoelectronics has been opened recently by a demonstration of continuous wave operation of InGaN blue–violet laser diodes. These laser diodes were fabricated on bulk GaN substrates with a low threading dislocation density.

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