Studies of CdTe surfaces with secondary ion mass spectrometry, rutherford backscattering and ellipsometry

1979 ◽  
Vol 19 (1) ◽  
pp. 25-33 ◽  
Author(s):  
M. Hage-Ali ◽  
R. Stuck ◽  
AN Saxena ◽  
P. Siffert
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

Rutherford backscattering and secondary ion mass spectrometry investigation of Mg:Ag–tris(8-hydroxy quinoline) aluminum interfaces

2003 ◽  
Vol 4 (1) ◽  
pp. 9-14 ◽  
Author(s):  
H.M. Grandin ◽  
S.M. Tadayyon ◽  
W.N. Lennard ◽  
K. Griffiths ◽  
L.L. Coatsworth ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering ◽  
Ion Mass Spectrometry ◽  
Hydroxy Quinoline ◽  
Secondary Ion

Radiation-Induced Segregation of Metals At Moving SiO2-Amorphous Si Interfaces

1996 ◽  
Vol 439 ◽  
Author(s):  
J. S. Williams ◽  
M. Petravic ◽  
M. Conway ◽  
K. T. Short
Keyword(s):  
Mass Spectrometry ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering ◽  
Assisted Migration ◽  
Ion Mass Spectrometry ◽  
Radiation Induced ◽  
Amorphous Si ◽  
Secondary Ion

AbstractSecondary ion mass spectrometry and Rutherford backscattering/channeling analysis have been used to study the segregation of Au at moving Si-SiO2 interfaces during bombardment of Si with 15 keV O- ions. Essentially 100% of the Au is found to segregate at a bombardment temperature of 250°C, whereas only partial segregation occurs for room temperature bombardment. Up to 10 monolayers of Au can be segregated in disordered Si behind an SiO2 layer at 250°C. These results are discussed in terms of ion-assisted migration of Au in disordered Si and extremely low solubilities of Au in SiO2.

Enhanced Diffusion and Formation of Defects During Thermal Oxidation

1980 ◽  
Vol 2 ◽  
Author(s):  
J. Narayan ◽  
J. Fletcher ◽  
B. R. Appleton ◽  
W. H. Christie
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Thermal Oxidation ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering ◽  
Enhanced Diffusion ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

ABSTRACTEnhanced diffusion of dopants and the formation of defects during thermal oxidation of silicon has been investigated using electron microscopy, Rutherford backscattering, and secondary ion mass spectrometry techniques. Enhanced diffusion of boron was clearly demonstrated in laser annealed specimens in which secondary defects were not present. In the presence of secondary defects, such as precipitates, enhanced diffusion of boron was not observed. The absence of enhanced diffusion during thermal oxidation was also observed for arsenic in silicon. The mechanisms associated with thermal–oxidation enhanced diffusion are discussed briefly.

Solute diffusion in α-Zr: Rutherford backscattering and secondary-ion mass spectrometry study

1991 ◽  
Vol 63 (5) ◽  
pp. 937-947 ◽  
Author(s):  
G. M. Hood ◽  
T. Laursen ◽  
J. A. Jackman ◽  
R. Belec ◽  
R. J. Schultz ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering ◽  
Solute Diffusion ◽  
Mass Spectrometry Study ◽  
Ion Mass Spectrometry ◽  
Secondary Ion
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