Absolute thermal expansion measurements of single-crystal silicon in the range 300?1300 K with an interferometric dilatometer

1988 ◽  
Vol 9 (6) ◽  
pp. 1101-1109 ◽  
Author(s):  
M. Okaji
Keyword(s):  
Thermal Expansion ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Interferometric Dilatometer

scholarly journals Thermal expansion and compressibility of single-crystal silicon between 285 K and 320 K

2020 ◽  
Vol 31 (6) ◽  
pp. 065013 ◽  
Author(s):  
Guido Bartl ◽  
Clemens Elster ◽  
Jörg Martin ◽  
René Schödel ◽  
Michael Voigt ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals Thermal expansion coefficient of single-crystal silicon from 7 K to 293 K

2015 ◽  
Vol 92 (17) ◽  
Author(s):  
Thomas Middelmann ◽  
Alexander Walkov ◽  
Guido Bartl ◽  
René Schödel
Keyword(s):  
Thermal Expansion ◽  
Single Crystal ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Sign in / Sign up

Export Citation Format

Share Document