Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC
2005 ◽
Vol 483-485
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pp. 365-368
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Keyword(s):
Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (Ec) have been detected.
2009 ◽
Vol 615-617
◽
pp. 369-372
2007 ◽
Vol 131-133
◽
pp. 363-368
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2002 ◽
Vol 389-393
◽
pp. 489-492
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2015 ◽
Vol 66
(6)
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pp. 323-328
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2011 ◽
Vol 178-179
◽
pp. 192-197
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