Pulsed CO2 laser-driven production of ultrafine silicon, silicon carbide, silicon nitride and silicon oxynitride powders

1989 ◽  
Vol 11 (3) ◽  
pp. 487-493 ◽  
Author(s):  
E. Borsella ◽  
L. Caneve ◽  
R. Fantoni ◽  
S. Piccirillo
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Co2 Laser ◽  
Silicon Oxynitride ◽  
Pulsed Co2 Laser ◽  
Silicon Silicon

General theory of anodic oxidation of silicon and its compounds (analytical review)

2021 ◽  
Vol 4 ◽  
pp. 15-24
Author(s):  
L. P. Mileshko ◽  
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
General Theory ◽  
Anodic Oxidation ◽  
Linear Dependence ◽  
Anodic Oxide ◽  
Environmental Safety ◽  
Analytical Review ◽  
Anodic Reactions ◽  
Silicon Silicon

The identity of the mechanisms of anodic oxide films formation on silicon, silicon carbide, and silicon nitride is proved, which can be used as the basis for the General theory of anodic oxidation of these materials. The processes of galvanostatic anodic oxidation of Si, SiC and Si3N4 in the intervals of linear dependence of the formation voltage on time proceed with activation control. The limiting stages in all cases are the anodic reactions of the formation of intermediate SiO monoxide. Preference should be given to electrolytes with lower values of the potential environmental hazard criterion of the electrolyte, which have a higher degree of environmental safety.

Oxidation of Silicon, Silicon Carbide, and Silicon Nitride in Gases Containing Oxygen and Chlorine

1993 ◽  
Vol 76 (6) ◽  
pp. 1621-1623 ◽  
Author(s):  
PeiPei Hsu ◽  
Sikyin Ip ◽  
Chan Park ◽  
Michael J. McNallan
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Silicon Silicon

The plasma arc production of Si-based ceramic whiskers

1993 ◽  
Vol 8 (8) ◽  
pp. 1996-2003 ◽  
Author(s):  
C.A. Pickles ◽  
J.M. Toguri
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Silicon Monoxide ◽  
Silicon Oxynitride ◽  
Gas Composition ◽  
Plasma Arc ◽  
Operating Variables ◽  
Silicon Carbide Whiskers ◽  
Vapor Liquid Solid Mechanism ◽  
Silicon Based

Silicon-based ceramic whiskers, such as silicon carbide and silicon nitride, were produced in a plasma arc reactor. Silicon monoxide gas was generated by reacting briquettes of silica and carbon according to the following reaction: SiO2(s or l) + C(s) = SiO(g) + CO(g). The effects of operating variables on the production of silicon monoxide are discussed. The silicon monoxide gas was then back-reacted with carbon monoxide to produce silicon carbide whiskers according to the following reaction: SiO(g) + 3CO(g) = SiC(s) + 2CO2(g). In the presence of nitrogen, the product contained some silicon nitride and silicon oxynitride whiskers. The effects of gas composition and flow rate, crucible mass, and alkali additions on the amount and morphology of the whiskers were determined. It is concluded that the whiskers grew by a vapor-liquid-solid mechanism.

Bombardment induced light emission from silicon, silicon nitride and silicon carbide surfaces

1977 ◽  
Vol 32 (1-2) ◽  
pp. 25-31 ◽  
Author(s):  
R. S. Bhattacharya ◽  
J. F. Van Der Veen ◽  
C. B. W. Kerkdijk ◽  
F. W. Saris
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Light Emission ◽  
Silicon Silicon

Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires

2002 ◽  
Vol 12 (5) ◽  
pp. 1606-1611 ◽  
Author(s):  
Gautam Gundiah ◽  
G. V. Madhav ◽  
A. Govindaraj ◽  
Md. Motin Seikh ◽  
C. N. R. Rao
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Silicon Oxynitride ◽  
Synthesis And Characterization
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