Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

Amorphous hydrogenated silicon carbide (a-SiC:H) thin films have been prepared by the RF reactive magnetron sputtering technique. The optical properties of the films have been studied by optical spectroscopy with an incoherent light source. The material is commonly regarded as a dielectric. We have discovered however that some films that were prepared under certain deposition conditions and on certain substrates may respond to external light as a metallic thin film, i.e. there are strongly enhanced reflection peaks in the optical spectrum. We have further discovered that some films may have a strong and broadened absorption peak at about 590 nm, which is an apparent photonic bandgap in the visible spectrum. The appearance of the photonic bandgap is very sensitive to two parameters: the substrate and the deposition gas. By changing the two parameters, one shifts the status of the film from with and without the photonic bandgap.

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SiH bond-bending modes of the HSi-(OSi)3 group in amorphous hydrogenated silicon dioxide

Applied Physics Letters ◽

10.1063/1.118367 ◽

1997 ◽

Vol 70 (2) ◽

pp. 203-205 ◽

Cited By ~ 4

Author(s):

Shu-Ya Lin

Keyword(s):

Silicon Dioxide ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon ◽

Bond Bending ◽

Bending Modes

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Stoichiometric amorphous hydrogenated silicon carbide thin film synthesis using DC-saddle plasma enhanced chemical vapour deposition

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6465984 ◽

2013 ◽

Author(s):

Behzad Jazizadeh Karimi ◽

Ali B. Alamin Dow ◽

Nazir P. Kherani

Keyword(s):

Thin Film ◽

Silicon Carbide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon ◽

Film Synthesis

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The Role of Ce3+ vs. Ce4+ during the Polishing of Silicon Dioxide and Silicon Nitride Films using Ceria Abrasives

Imaging and Applied Optics Technical Papers ◽

10.1364/oft.2012.om2d.1 ◽

2012 ◽

Cited By ~ 1

Author(s):

S. V. Babu ◽

Veera P. Dandu

Keyword(s):

Silicon Nitride ◽

Silicon Dioxide ◽

Silicon Nitride Films

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Micromechanical characterization of chemically vapor deposited ceramic films

Journal of Materials Research ◽

10.1557/jmr.1994.2072 ◽

1994 ◽

Vol 9 (8) ◽

pp. 2072-2078 ◽

Cited By ~ 8

Author(s):

J.M. Grow ◽

R.A. Levy

Keyword(s):

Silicon Carbide ◽

Silicon Nitride ◽

Boron Nitride ◽

Silicon Dioxide ◽

Boron Carbide ◽

Young’S Modulus ◽

Young's Modulus ◽

Ceramic Films ◽

Chemically Vapor Deposited ◽

Micromechanical Characterization

In this study, nanoindentation is used to determine Young's modulus of chemically vapor deposited films consisting of silicon carbide, silicon nitride, boron carbide, boron nitride, and silicon dioxide. Diethylsilane and ditertiarybutylsilane were used as precursors in the synthesis of the silicon-based material, while triethylamine borane complex was used for the boron-based material. The modulus of these films was observed to be dependent on the processing conditions and resulting composition of the deposits. For the silicon carbide, silicon nitride, boron carbide, and boron nitride films, the carbon content in the films was observed to increase significantly with higher deposition temperatures, resulting in a corresponding decrease in values of Young's modulus. The composition of the silicon dioxide films was near stoichiometry over the investigated deposition temperature range (375–475 °C) with correspondingly small variations in the micromechanical properties. Subsequent annealing of these oxide films resulted in a significant increase in the values of Young's modulus due to hydrogen and moisture removal.

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