Oxidation of Silicon, Silicon Carbide, and Silicon Nitride in Gases Containing Oxygen and Chlorine

1993 ◽  
Vol 76 (6) ◽  
pp. 1621-1623 ◽  
Author(s):  
PeiPei Hsu ◽  
Sikyin Ip ◽  
Chan Park ◽  
Michael J. McNallan
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Silicon Silicon

General theory of anodic oxidation of silicon and its compounds (analytical review)

2021 ◽  
Vol 4 ◽  
pp. 15-24
Author(s):  
L. P. Mileshko ◽  
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
General Theory ◽  
Anodic Oxidation ◽  
Linear Dependence ◽  
Anodic Oxide ◽  
Environmental Safety ◽  
Analytical Review ◽  
Anodic Reactions ◽  
Silicon Silicon

The identity of the mechanisms of anodic oxide films formation on silicon, silicon carbide, and silicon nitride is proved, which can be used as the basis for the General theory of anodic oxidation of these materials. The processes of galvanostatic anodic oxidation of Si, SiC and Si3N4 in the intervals of linear dependence of the formation voltage on time proceed with activation control. The limiting stages in all cases are the anodic reactions of the formation of intermediate SiO monoxide. Preference should be given to electrolytes with lower values of the potential environmental hazard criterion of the electrolyte, which have a higher degree of environmental safety.

Bombardment induced light emission from silicon, silicon nitride and silicon carbide surfaces

1977 ◽  
Vol 32 (1-2) ◽  
pp. 25-31 ◽  
Author(s):  
R. S. Bhattacharya ◽  
J. F. Van Der Veen ◽  
C. B. W. Kerkdijk ◽  
F. W. Saris
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Light Emission ◽  
Silicon Silicon

Mechanical behaviour of silicon-silicon carbide composites

1996 ◽  
Vol 16 (7) ◽  
pp. 703-712 ◽  
Author(s):  
E. Scafè ◽  
G. Giunta ◽  
L. Fabbri ◽  
L. Di Rese ◽  
G. De Portu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Mechanical Behaviour ◽  
Silicon Silicon
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