Synthesis and characterization of Pb(Zr0.54Ti0.46)O3 thin films on (100)Si using textured YBa2Cu3O7−δ and yttria-stabilized zirconia buffer layers by laser physical vapor deposition technique

1994 ◽  
Vol 23 (9) ◽  
pp. 879-882 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
J. Narayan
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Synthesis And Characterization ◽  
Deposition Technique ◽  
Stabilized Zirconia ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique

Preparation of Pb(Zr0.54Ti0.46)O3 Thin Films on (100)Si Using Textured YBa2Cu3O7−δ and Yttria-Stabilized Zirconia Buffer Layers by Laser Physical Vapor Deposition Technique

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
A. Morimoto ◽  
V.N. Shukla ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Ferroelectric Properties ◽  
Processing Parameters ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Stabilized Zirconia ◽  
Vapor Deposition Technique ◽  
Pzt Films ◽  
Physical Vapor Deposition Technique

ABSTRACTWe have fabricated high-quality <001> textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si with interposing <001> textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 nanoseconds). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using X-ray diffraction, high-resolution transmission electron microscopy and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9X10−4 torr) at 775°C on (001)Si substrate having <001>YSZ// <001>Si texture. The YBCO thin films were deposited in-situ in oxygen ambient (200 mtorr) at 650°C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530°C and 0.4–0.6 torr, respectively. The laser fluence to deposit this multistructure was 2.5–5.0 J/cm2. The <001> textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2 and a coersive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.

Synthesis of lead oxide thin films by using physical vapor deposition technique

2021 ◽  
Vol 42 ◽  
pp. 2752-2755
Author(s):  
Ahmed F. Abdulrahman ◽  
Raghad Y. Mohammed ◽  
Sabah M. Ahmed ◽  
Samir M. Hamad
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Lead Oxide ◽  
Physical Vapor Deposition ◽  
Deposition Technique ◽  
Oxide Thin Films ◽  
Vapor Deposition Technique ◽  
Physical Vapor Deposition Technique

Fabrication of robust solar mirrors on polymeric substrates by physical vapor deposition technique

2020 ◽  
Vol 209 ◽  
pp. 110476
Author(s):  
Fiona A. Alder ◽  
Eric Charrault ◽  
Kamil Zuber ◽  
Manrico Fabretto ◽  
Apurva Patil ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Deposition Technique ◽  
Vapor Deposition Technique ◽  
Polymeric Substrates ◽  
Physical Vapor Deposition Technique
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