Structural characterization of low temperature Epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM

1993 ◽  
Vol 22 (2) ◽  
pp. 247-253 ◽  
Author(s):  
Zhizhen Ye ◽  
Yaping Liu ◽  
Zhen-Hong Zhou ◽  
Rafael Reif
Keyword(s):  
Low Temperature ◽  
Structural Characterization ◽  
Cross Sectional ◽  
Ultrahigh Resolution ◽  
Si Substrates

scholarly journals Characterization of Gaas/Si/GaAs Heterointerfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
Zuzanna Liliental-Weber ◽  
Raymond P. Mariella
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Defect Density ◽  
Si Substrate ◽  
Reverse Polarity ◽  
Si Substrates ◽  
Transmission Electron ◽  
Metal Semiconductor Metal

ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates. It is shown that the GaAs epitaxial layer grown on thin Si layer has reverse polarity to the substrate (antiphase relation). Higher defect density is observed for GaAs grown on Si substrate. This higher defect density correlates with an increased device speed, but with reduced sensitivity.

Synthesis and Structural Characterization of NaxSi136 (0 < x ≤ 24) Single Crystals and Low-Temperature Transport of Polycrystalline Specimens

2012 ◽  
Vol 51 (16) ◽  
pp. 8686-8692 ◽  
Author(s):  
Stevce Stefanoski ◽  
Christos D. Malliakas ◽  
Mercouri G. Kanatzidis ◽  
George S. Nolas
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Structural Characterization ◽  
X 24

Structural Characterization of 3C-SiC Grown Using Methyltrichlorosilane

2013 ◽  
Vol 740-742 ◽  
pp. 291-294 ◽  
Author(s):  
Matteo Bosi ◽  
Giovanni Attolini ◽  
Béla Pécz ◽  
Zsolt Zolnai ◽  
László Dobos ◽  
...  
Keyword(s):  
Residual Stress ◽  
Gas Phase ◽  
Structural Characterization ◽  
Amorphous Content ◽  
Si Substrates

3C-SiC layers were grown on Si substrates using standard precursors (SiH4and C3H8) and by adding methyl trichloro silane (MTS) to the gas phase, with growth temperatures between 1200 and 1300 °C. Characterization of the 3C-SiC layers shows that 3C-SiC grown with MTS has higher polycrystalline and amorphous content as well as lower residual stress.

Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Migration-Enhanced Molecular Beam Epitaxial Growth and Characterization of GaAs on Si Substrates

1988 ◽  
Vol 144 ◽  
Author(s):  
J.H. Kim ◽  
S. Sakai ◽  
J.K. Liu ◽  
G. Raohakrishnan ◽  
S.S. Chang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Cross Sectional ◽  
Light Emitting ◽  
Si Substrates ◽  
Molecular Beam Epitaxial

ABSTRACTWe first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layers on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100) Sisubstrates misoriented 4 toward [110] direction. The MEMBE growth method isdescribed and material properties are compared with those of normal two-step MBE-grown or in-situ annealed layers. Micrographs of cross-sectional view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 107 cm-2 over ten times lower than those of two-step MBE-grown or in-situ annealedlayers. AlGaAs/GaAs double heterostructure lasers and light-emitting diodeshave been successfully grown on MEMBE GaAs/Si by both metal organic chemical vapor deposition and liquid phase epitaxy. MOCVD-grown lasers showed peak output power as high as 184 mW/facet, pulsed threshold currents as low as150 mA at 300 K, and differential quantum efficiencies of up to 30 %. The LPE-grown light-emitting diodes showed output powers of 1.5 mW and external quantum efficiencies of 3.3 mW/A per facet.

Optical and structural characterization of thin MoS2 layers on SiO2/Si substrates, towards the development of MoS2/Si heterojunction photovoltaics

2021 ◽  
Author(s):  
Bienlo Zerbo ◽  
Mircea Modreanu ◽  
Ian Povey ◽  
Antoine Letoublon ◽  
Alain Rolland ◽  
...  
Keyword(s):  
Structural Characterization ◽  
Si Substrates

Phase and structural characterization of vanadium oxide films grown on amorphous SiO[sub 2]/Si substrates

2004 ◽  
Vol 22 (3) ◽  
pp. 719 ◽  
Author(s):  
Doo-Hyeb Youn ◽  
Hyun-Tak Kim ◽  
Byung-Gue Chae ◽  
Young-Joo Hwang ◽  
Ju-Wook Lee ◽  
...  
Keyword(s):  
Vanadium Oxide ◽  
Structural Characterization ◽  
Oxide Films ◽  
Si Substrates ◽  
Vanadium Oxide Films

scholarly journals Low temperature synthesis route and structural characterization of (Bi0.5A0.5)(Sc0.5Nb0.5)O3 (A = K+ and Na+) perovskites

2018 ◽  
Vol 5 (5) ◽  
pp. 1033-1044 ◽  
Author(s):  
T. Wesley Surta ◽  
Alicia Manjón-Sanz ◽  
Eric Qian ◽  
T. Thao Tran ◽  
Michelle R. Dolgos
Keyword(s):  
Crystal Structure ◽  
Low Temperature ◽  
Structural Characterization ◽  
Structure Determination ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Synthesis And Crystal Structure ◽  
Synthesis Route ◽  
Phase Pure

First report of the phase pure synthesis and crystal structure determination for Bi0.5A0.5(Sc0.5Ta0.5)O3 (A = K+, Na+).

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