Epitaxial growth and characterization of BP on Si(100) substrate for use in c-GaN study

2005 ◽  
Vol 891 ◽  
Author(s):  
Tomohiko Takeuchi ◽  
Suzuka Nishimura ◽  
Tomoyuki Sakuma ◽  
Satoru Matumoto ◽  
Kazutaka Terashima
Keyword(s):  
Epitaxial Layer ◽  
Careful Analysis ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Impurity Doping ◽  
Hall Effect Measurements

ABSTRACTBoronmonophosphide(BP) is one of the suitable materials for a buffer layer between the c-GaN(100) and Si(100) substrates. The growth of BP layer was carried out by MOCVD on Si(100) substrate of 2 inch in diameter. The growth rate was over 2 μm/h without any troubles such as the bowing or cracking. In addition, the thickness of BP epitaxial layer was uniform over a wide area. A careful analysis of x-ray diffraction suggested that the growth of BP epitaxial layer inherited the crystal orientation from Si(100) substrate. Cross-sectional TEM images showed some defects like dislocations near the interface between BP layer and Si substrate. The Hall effect measurements indicated that the conduction type of BP films grown on the both n-Si and p-Si substrates was n-type without impurity doping, and that the mobility and carrier concentrations were typically 357cm2/Vs and 1.5×1020cm−3(on n-Si) and 63cm2/Vs and 1.9×1019cm−3(on p-Si), respectively. In addition, c-GaN was grown on the substrate of BP/Si(100) by RF-MBE.

Structural Characterization of P-I-N Diode Superlattice Structures Grown on , , and Orientation Si Substrates

1991 ◽  
Vol 220 ◽  
Author(s):  
P. M. Adams ◽  
R. C. Bowman ◽  
V. Arbet-Engols ◽  
K. L. Wang ◽  
C. C. Ahn
Keyword(s):  
Electron Microscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Substrate Orientation ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron ◽  
Superlattice Structures ◽  
Strained Layer Superlattices

ABSTRACTP-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.

scholarly journals Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

1994 ◽  
Vol 358 ◽  
Author(s):  
A. R. Heyd ◽  
S. A. Alterovitz ◽  
E. T. Croke
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Alloy Composition ◽  
Compressive Strain ◽  
Energy Shift ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Graded Layers

ABSTRACTSixGe1–x heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on SixGe1–x heterostructures on Ge substrates has not received much attention. A SixGe1–x: layer on a Si substrate is under compressive strain while SixGe1–x on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content SixGe1–x layers the energy shift algorithm, which is used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize SixGe1–x/Ge superlattices grown on Ge substrates. The results are found to agree closely with high resolution x-ray diffraction measurements made on the same samples.The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded SixGe1–x layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 µm SixGe1–x layer linearly graded in the range 0.5 ≤ x ≤ 1.0.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Characterization of Recoiling Oxygen in Silicon by Double-Crystal X-Ray Diffraction, Tem and Monte Carlo Simulation

1986 ◽  
Vol 69 ◽  
Author(s):  
F. Cembali ◽  
A. M. Mazzone ◽  
M. Servidori
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Double Crystal ◽  
X Ray ◽  
Free Carriers ◽  
Anomalous Formation

The widespread use of through-oxide implants in Si-MOS technology has prompted many studies to characterize the behaviour of oxygen recoiling from the passivating SiO2 layer into the Si substrate. These studies have given support for the idea that an anomalous formation of defects, which alter the profile of the implanted impurity and the mobility of the free carriers, is connected with the oxygen recoils.

Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

1996 ◽  
Vol 441 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg ◽  
A. Grisaru
Keyword(s):  
Diffusion Barrier ◽  
Vacuum Annealing ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractThe TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

Characterization of Epitaxial CoSi2 Films Grown on Si

1984 ◽  
Vol 41 ◽  
Author(s):  
A. H. Hamdi ◽  
M-A. Nicolet ◽  
Y. C. Kao ◽  
M. Tejwani ◽  
K. L. Wang
Keyword(s):  
High Temperature Annealing ◽  
Si Substrate ◽  
Chemical Cleaning ◽  
X Ray ◽  
Lattice Constants ◽  
Si Substrates ◽  
Preparation Techniques ◽  
Minimum Yield

AbstractX-ray rocking curves and backscattering spectrometry with channeling have been employed to investigate epitaxial CoSi2 films grown on <111> Si substrates. Several preparation techniques were used: sputter cleaning, chemical cleaning, chemical cleaning with subsequent high temperature annealing, and e-gun evaporation on a cold or hot Si substrate, in situ annealing between 550–750°C for 30 min. Best results were obtained with chemical cleaning and pre-annealing at 925°C for 10 min, Co and Si codeposition on a 580'C hot substrate. For such samples, a typical x-ray perpendicular strain is -2.08%, and parallel strain is -0.11%. This parallel strain implies that the growth has been accommodated by dislocations with a spacing of ,∼ 2000 Å. The values of strain are consistent with the published lattice constants of Si and CoSi2 and Poisson's ratio of 0.28. The minimum yield in the channeling spectra of these films is. ∼ 3.6%, which is only slightly higher than that of <111> virgin Si.

Material Characterization of Epitaxial GaAs and Ge Films on (100) Si Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
M. Abdul Awal ◽  
El Hang Lee ◽  
G. L. Koos ◽  
E. Y. Chan ◽  
G. K. Celler ◽  
...  
Keyword(s):  
Material Characterization ◽  
Defect Density ◽  
Electrical Characterization ◽  
Electron Beam Evaporation ◽  
Cross Sectional ◽  
X Ray ◽  
Si Substrates ◽  
Exponential Decrease ◽  
Gaas Films

ABSTRACTWe report some results on the chemical, structural and electrical characterization of Ge and GaAs films, grown on Si (100) substrates by electron-beam evaporation and MOCVD, respectively. Good quality Ge films have been obtained at 700°C substrate temperature at a growth rate of 5 nm/sec in 5 × 10−7 torr. Similarly, good GaAs films were obtained at 650°C and at 0.3 nm/sec. RBS data for GaAs films (1.1 μm) show Xmin approaching 3.5%, and Ge films (1.5 μm) around 3.6%. Photoluminescence of the same films show peaks around 852 nm with FWHM of 14 meV. Cross-sectional TEM and etching show a near-exponential decrease in defect density away from the Ge/Si interface. Detailed characterization results of the S-R, I-V, C-V, and X-ray studies are also described.

Laser Recrystallization of InP Films on Oxidized Si Substrate

1985 ◽  
Vol 53 ◽  
Author(s):  
Li Xiqiang ◽  
Zhu Weiwen ◽  
Lin Chenglu ◽  
Wang Weiyuan ◽  
Tsou Shihchang
Keyword(s):  
Grain Size ◽  
Laser Power ◽  
Beam Diameter ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Si Substrates ◽  
Laser Recrystallization ◽  
Before And After

ABSTRACTThe InP films with thickness of 1-2 µm and resistivity of 10-10−3Ω-cm were sputtered on oxidized Si substrates heated at about 300°C to form as InP SOI. Using X-ray diffraction, ED, TEM, Hall and RBS, we have investigated the grain size, compositions, thermal stability and electrical characteristics of InP SOI before and after CW Ar+ laser recrystallization. The sputtered InP SOI films appear as polycrystalline and its grain size increases with increasing of irradiated laser power from 5.8 to 7.0 W at a beam diameter of 70 µm. After irradiation at 7 W the single crystal ED patterns are obtained, the mobility and carrier concentrations amount to 103cm2/Vs and 1017cm−3, respectively, and the compositions are stoichiometric.

Characterization of p-type 4H-SiC epitaxial layer grown on (11-20) substrate

2001 ◽  
Vol 680 ◽  
Author(s):  
Kazutoishi Kojima ◽  
Toshiyuki Ohno ◽  
Mituhiro Kushibe ◽  
Koh Masahara ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Boron Concentration ◽  
Hole Mobility ◽  
Crystalline Quality ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hall Effect Measurements ◽  
P Type ◽  
Incorporation Efficiency

ABSTRACTGrowth and characterization of p-type 4H-SiC epitaxial layers grown on (11-20) substrates are reported. P-type 4H-SiC epilayers with smooth surface morphology have been grown on (11-20) substrates by low-pressure, hot-wall type CVD with SiH4–C3H8–H2–TMA system. The doping concentration can be controlled in the range from about 1×1016cm−3 to 1×1019cm−3. Anisotropy of the crystalline quality is observed by x-ray diffraction measurement. P-type epilayers, in which near band-gap emissions are dominated and D-A pair peak is not observed, are obtained. Hole mobility of (11-20) epilayers is smaller than that of (0001) epilayers probably due to the lack of crystalline quality compared to (0001) epilayers. The results of both low-temperature photoluminescence and the temperature dependence of Hall effect measurements indicate that the boron concentration as undoped impurity in (11-20) epilayer is lower than that of (0001) epilayer. This may be caused by the smaller incorporation efficiency of boron into (11-20) epilayer than that of (0001) epilayer.

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