The dissolution mechanism of oxide precipitates in czochralski silicon degenerately doped with boron during high temperature annealing
1993 ◽
Vol 22
(1)
◽
pp. 105-110
◽
Keyword(s):
1995 ◽
Vol 142
(9)
◽
pp. 3189-3192
◽
2009 ◽
Vol 311
(12)
◽
pp. 3273-3277
◽
Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing
1989 ◽
Vol 47
◽
pp. 604-605