Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing

2009 ◽  
Vol 311 (12) ◽  
pp. 3273-3277 ◽  
Author(s):  
Yuheng Zeng ◽  
Jiahe Chen ◽  
Miangyang Ma ◽  
Weiyan Wang ◽  
Deren Yang
Keyword(s):  
High Temperature ◽  
Enhancement Effect ◽  
High Temperature Annealing ◽  
Czochralski Silicon ◽  
Co Doping ◽  
Oxygen Precipitation ◽  
Phosphorus Doped

Microdefects in Heavily Phosphorus-Doped Czochralski Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 201-204 ◽  
Author(s):  
Zhen Hui Wang ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Effective Means ◽  
Rapid Thermal Anneal ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Phosphorus Doped

Oxygen precipitation (OP) and annihilation of voids in heavily phosphorus (P)-doped Czochralski (Cz) silicon have been investigated. It was found that the nucleation anneal at 650°C resulted in much more pronounced OP in the subsequent high temperature anneal than that at 800 or 900 °C. This was due to that SiP precipitates could be formed in heavily P-doped Cz silicon by the 650oC anneal and they acted as the heterogeneous nuclei for OP in the following anneal at high temperatures. The rapid thermal anneal (RTA) at 1200°C was proved to be an effective means to annihilate voids. Moreover, it was found that the significant OP resulting from the two-step anneal of 650°C/8 h + 1000°C/16 h could also cause the substantial annihilation of voids in heavily P-doped Cz silicon. The mechanisms for the annihilation of voids have been tentatively discussed.

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

2019 ◽  
Vol 18 (1) ◽  
pp. 1001-1011 ◽  
Author(s):  
Yuheng Zeng ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Xinpeng Zhang ◽  
Lixia Lin ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Phosphorus Doped

Improvement of Czochralski Silicon Wafers By High‐Temperature Annealing

1995 ◽  
Vol 142 (9) ◽  
pp. 3189-3192 ◽  
Author(s):  
D. Gräf ◽  
U. Lambert ◽  
M. Brohl ◽  
A. Ehlert ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
High Temperature Annealing ◽  
Czochralski Silicon

Enhancement of oxygen precipitation in Czochralski silicon wafers by high-temperature anneals

2006 ◽  
Vol 376-377 ◽  
pp. 169-172 ◽  
Author(s):  
Ling Zhong ◽  
Xiangyang Ma ◽  
Daxi Tian ◽  
Deren Yang
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Impact of germanium co-doping on oxygen precipitation in heavily boron-doped Czochralski silicon

2016 ◽  
Vol 99 ◽  
pp. 35-40 ◽  
Author(s):  
Jian Zhao ◽  
Peng Dong ◽  
Jianjiang Zhao ◽  
Xiangyang Ma ◽  
Deren Yang
Keyword(s):  
Czochralski Silicon ◽  
Co Doping ◽  
Oxygen Precipitation ◽  
Boron Doped
Sign in / Sign up

Export Citation Format

Share Document