Improvement of Czochralski Silicon Wafers By High‐Temperature Annealing

1995 ◽  
Vol 142 (9) ◽  
pp. 3189-3192 ◽  
Author(s):  
D. Gräf ◽  
U. Lambert ◽  
M. Brohl ◽  
A. Ehlert ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
High Temperature Annealing ◽  
Czochralski Silicon

Enhancement of oxygen precipitation in Czochralski silicon wafers by high-temperature anneals

2006 ◽  
Vol 376-377 ◽  
pp. 169-172 ◽  
Author(s):  
Ling Zhong ◽  
Xiangyang Ma ◽  
Daxi Tian ◽  
Deren Yang
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

SAM studies on high‐temperature annealing of vanadium thin films on oxidized silicon wafers

1982 ◽  
Vol 20 (3) ◽  
pp. 804-806 ◽  
Author(s):  
Jiann‐Ruey Chen ◽  
Chia‐Pin Sung ◽  
Fon‐Shan Yeh ◽  
Yuen‐Chung Liu ◽  
Chikuang C. Wang
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Silicon Wafers ◽  
High Temperature Annealing

Internal oxidation of vacancy agglomerates in Czochralski silicon wafers during high-temperature anneals

1998 ◽  
Vol 72 (2) ◽  
pp. 223-225 ◽  
Author(s):  
G. Kissinger ◽  
G. Morgenstern ◽  
J. Vanhellemont ◽  
D. Gräf ◽  
U. Lambert ◽  
...  
Keyword(s):  
High Temperature ◽  
Internal Oxidation ◽  
Silicon Wafers ◽  
Czochralski Silicon

Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

1996 ◽  
Vol 36 (1-3) ◽  
pp. 50-54 ◽  
Author(s):  
D. Gräf ◽  
U. Lambert ◽  
M. Brohl ◽  
A. Ehlert ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Wafers ◽  
Czochralski Silicon
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