scholarly journals Characterization of deep level defects in Si irradiated with MeV Ar+ ions using constant capacitance time analyzed transient spectroscopy

1997 ◽  
Vol 20 (4) ◽  
pp. 417-421
Author(s):  
P K Giri ◽  
S Dhar ◽  
V N Kulkarni ◽  
Y N Mohapatra
Keyword(s):  
Deep Level ◽  
Transient Spectroscopy

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

2001 ◽  
Vol 89 (2) ◽  
pp. 1172-1174 ◽  
Author(s):  
V. V. Ilchenko ◽  
S. D. Lin ◽  
C. P. Lee ◽  
O. V. Tretyak
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Self Assembled ◽  
Transient Spectroscopy

Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces

2011 ◽  
Vol 109 (6) ◽  
pp. 064514 ◽  
Author(s):  
A. F. Basile ◽  
J. Rozen ◽  
J. R. Williams ◽  
L. C. Feldman ◽  
P. M. Mooney
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors

2004 ◽  
Vol 85 (3) ◽  
pp. 413-415 ◽  
Author(s):  
H. Fujioka ◽  
T. Sekiya ◽  
Y. Kuzuoka ◽  
M. Oshima ◽  
H. Usuda ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Defect Characterization ◽  
Transient Spectroscopy

A charge-based deep level transient spectroscopy measurement system and characterization of a ZnO-based varistor and a Fe-doped SrTiO3dielectric

2016 ◽  
Vol 55 (2) ◽  
pp. 026601 ◽  
Author(s):  
Takafumi Okamoto ◽  
Jeffrey Long ◽  
Rudeger H. T. Wilke ◽  
Joseph Stitt ◽  
Russell Maier ◽  
...  
Keyword(s):  
Measurement System ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Measurement ◽  
Transient Spectroscopy ◽  
A Charge
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