The results of experimental studies of capacitance–
voltage characteristics, spectra of deep-level transient spectroscopy
of graded high-voltage GaAs p+−p0−i−n0 diodes fabricated by
liquid-phase epitaxy at a crystallization temperature of 900C from
one solution–melt due to autodoping with background impurities,
in a hydrogen or argon ambient, before and after irradiation
with neutrons. After neutron irradiation, deep-level transient
spectroscopy spectra revealed wide zones of defect clusters with
acceptor-like negatively charged traps in the n0-layer, which arise
as a result of electron emission from states located above the
middle of the band gap. It was found that the differences
in capacitance–voltage characteristics of the structures grown in
hydrogen or argon ambient after irradiation are due to different
doses of irradiation of GaAs p+−p0−i−n0 structures and different
degrees of compensation of shallow donor impurities by deep traps
in the layers.
Влияние нейтронного облучения на спектр дефектов с глубокими уровнями в GaAs, изготовленном методом жидкофазной эпитаксии в атмосфере водорода и аргона
