Characterization of a metastable defect labeled EM3 in hydrogen-implanted n-type silicon using deep-level transient spectroscopy
2008 ◽
Vol 19
(S1)
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pp. 281-284
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2005 ◽
Vol 44
(6A)
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pp. 3789-3792
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Keyword(s):
Keyword(s):
Keyword(s):
2015 ◽
Vol 242
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pp. 163-168
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2016 ◽
Vol 55
(2)
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pp. 026601
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2008 ◽
Vol 28
(5-6)
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pp. 787-790
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