scholarly journals Electron cyclotron resonance (ECR) plasma-enhanced chemical vapour deposition of silicon dioxide on strained-SiGe films using tetraethylorthosilicate

1998 ◽  
Vol 21 (4) ◽  
pp. 283-286
Author(s):  
L K Bera ◽  
S K Ray ◽  
H D Banerjee ◽  
C K Maiti
Keyword(s):  
Silicon Dioxide ◽  
Chemical Vapour Deposition ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
Electron Cyclotron ◽  
Ecr Plasma ◽  
Strained Sige

Properties of Gate-Quality SiO2 Films Prepared by Electron Cyclotron Resonance Chemical Vapour Deposition in an Ultrahigh Vacuum Processing System

1995 ◽  
Vol 386 ◽  
Author(s):  
Y. Tao ◽  
D. Landheer ◽  
J. E. Hulse ◽  
D.-X. Xu ◽  
T. Quance
Keyword(s):  
Chemical Vapour Deposition ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
High Vacuum ◽  
Chemical Vapour ◽  
Processing System ◽  
Electron Cyclotron ◽  
Ultra High Vacuum ◽  
Ex Situ

ABSTRACTWe have prepared thin SiO2 layers on Si(100) wafers by electron cyclotron resonance chemical vapour deposition (ECR-CVD) in a multi-chamber ultra-high vacuum (UHV) processing system. The oxides were characterized in-situ by single wavelength ellipsometry (SWE) and x-ray photoelectron spectroscopy (XPS) and ex-situ by Fourier transform infra-red spectroscopy (FTIR), spectroscopic ellipsometry (SE) and capacitance-voltage (CV) electrical measurements. Films deposited at higher pressures, low powers and low silane flow rates had excellent physical and electrical properties. Films deposited at 400 °C had better physical properties than those of thermal oxides grown in dry oxygen at 700 °C. A 1 minute anneal at 950 °C reduced the fast interface state density from 1.2×1011 to 7×1010 eV−1cm−2

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