On the bonding structure of hydrogenated carbon nitrides grown by electron cyclotron resonance chemical vapour deposition: towards the synthesis of non-graphitic carbon nitrides

2002 ◽  
Vol 11 (3-6) ◽  
pp. 1161-1165 ◽  
Author(s):  
F. Alonso ◽  
R. Gago ◽  
I. Jiménez ◽  
C. Gómez-Aleixandre ◽  
U. Kreissig ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
Electron Cyclotron ◽  
Graphitic Carbon ◽  
Bonding Structure ◽  
Carbon Nitrides

Properties of Gate-Quality SiO2 Films Prepared by Electron Cyclotron Resonance Chemical Vapour Deposition in an Ultrahigh Vacuum Processing System

1995 ◽  
Vol 386 ◽  
Author(s):  
Y. Tao ◽  
D. Landheer ◽  
J. E. Hulse ◽  
D.-X. Xu ◽  
T. Quance
Keyword(s):  
Chemical Vapour Deposition ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
High Vacuum ◽  
Chemical Vapour ◽  
Processing System ◽  
Electron Cyclotron ◽  
Ultra High Vacuum ◽  
Ex Situ

ABSTRACTWe have prepared thin SiO2 layers on Si(100) wafers by electron cyclotron resonance chemical vapour deposition (ECR-CVD) in a multi-chamber ultra-high vacuum (UHV) processing system. The oxides were characterized in-situ by single wavelength ellipsometry (SWE) and x-ray photoelectron spectroscopy (XPS) and ex-situ by Fourier transform infra-red spectroscopy (FTIR), spectroscopic ellipsometry (SE) and capacitance-voltage (CV) electrical measurements. Films deposited at higher pressures, low powers and low silane flow rates had excellent physical and electrical properties. Films deposited at 400 °C had better physical properties than those of thermal oxides grown in dry oxygen at 700 °C. A 1 minute anneal at 950 °C reduced the fast interface state density from 1.2×1011 to 7×1010 eV−1cm−2

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