Investigation into the Role of Cold Atmospheric Plasma on the Precision Grinding of RB-SiC Ceramic at Room Temperature

RB-SiC ceramic is one of the most important and useful material as optical precision elements in many scientific research fields. In this paper, a novel cold atmospheric plasma (CAP), which is based on the precision grinding process in surface technology to modify at room temperature (RT) for grinding with a combination of plasma oxidation surface modification is proposed. To identify the performance of the proposed cold atmospheric plasma (CAP) method on the surface modification of RB-SiC ceramic, precision grinding test was conducted. To reveal the fundamental issue in the grinding of RB-SiC ceramic, numerical calculation and model analysis were conducted to investigate the effect of the composite process on grinding forces and the mechanism of subsurface material removal in the presence of plasma oxidation. As a result of the method included the kept constant during the precision grinding of the composite process self-adaption-grinding process to avoid the deviation caused by second grinding particle entry. As a summary, we provides a significant cold atmospheric plasma-precision grinding compound process toward the establishment of the basic theory by analyzing the mechanism of the simulated design and computation. The process and technical difficulties of RB-SiC ceramic and mechanism of subsurface material removal during precision grinding were be solved.

Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiNx) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of the high-performance InGaZnO TFT with plasma-oxidized SiNx gate dielectric was also explored. The X-ray photoelectron spectroscopy (XPS) results confirmed that an oxygen-rich layer formed on the surface of the SiNx layer and the amount of oxygen vacancy near the interface between SiNx and InGaZnO layer was suppressed via pre-implanted oxygen on SiNx gate dielectric before deposition of the InGaZnO channel layer. Moreover, the conductance method was employed to directly extract the density of the interface trap (Dit) in InGaZnO TFT to verify the reduction in oxygen vacancy after plasma oxidation. The proposed InGaZnO TFT with plasma oxidation exhibited a field-effect mobility of 16.46 cm2/V·s, threshold voltage (Vth) of −0.10 V, Ion/Ioff over 108, SS of 97 mV/decade, and Vth shift of −0.37 V after NBIS. The plasma oxidation on SiNx gate dielectric provides a novel approach for suppressing the interface trap for high-performance InGaZnO TFT.

Nanoscale-Precision Removal of Copper in Integrated Circuits Based on a Hybrid Process of Plasma Oxidation and Femtosecond Laser Ablation

Copper (Cu) is the main interconnect conductor for integrated circuits (IC), and its processing quality is very important to device performance. Herein, a hybrid process of plasma oxidation and femtosecond laser (fs-laser) ablation was proposed for the nanoscale precision removal of Cu in integrated circuits. In this hybrid process, the surface layer of Cu was oxidized to the copper oxide by plasma oxidation, and then the fs-laser with a laser fluence lower than the Cu ablation threshold was used to remove the copper oxide without damaging the underlying Cu. Theoretically, the surface temperature evolutions of Cu and copper oxide under the femtosecond laser were studied by the two-temperature model, and it was revealed that the ablation threshold of copper oxide is much lower than that of Cu. The experimental results showed that the ablation threshold of copper oxide is lower than that of Cu, which is consistent with the theoretical analysis. Using the hybrid process, a surface roughness of 3 nm and a removal accuracy of 4 nm were obtained in the process of Cu film processing, which were better than those obtained by fs-laser ablation. This demonstrated that the hybrid process has good application potential in the field of copper micromachining.

Potential Effects of Delphinidin-3-O-Sambubioside and Cyanidin-3-O-Sambubioside of Hibiscus sabdariffa L. on Ruminant Meat and Milk Quality

The objective was to review the potential effects of adding anthocyanin delphinidin-3-O-sambubioside (DOS) and cyanidin-3-O-sambubioside (COS) of HS in animal diets. One hundred and four scientific articles published before 2021 in clinics, pharmacology, nutrition, and animal production were included. The grains/concentrate, metabolic exigency, and caloric stress contribute to increasing the reactive oxygen species (ROS). COS and DOS have antioxidant, antibacterial, antiviral, and anthelmintic activities. In the rumen, anthocyanin might obtain interactions and/or synergisms with substrates, microorganisms, and enzymes which could affect the fiber degradability and decrease potential methane (CH4) emissions; since anthocyanin interferes with ruminal fatty acids biohydrogenation (BH), they can increase the n-3 and n-6 polyunsaturated fatty acids (PUFA), linoleic acid (LA), and conjugated linoleic acid (CLA) in milk and meat, as well as improving their quality. Anthocyanins reduce plasma oxidation and can be deposited in milk and meat, increasing antioxidant activities. Therefore, the reduction of the oxidation of fats and proteins improves shelf-life. Although studies in ruminants are required, COS and DOS act as inhibitors of the angiotensin-converting enzyme (ACEi) and rennin expression, regulating the homeostatic control and possibly the milk yield and body weight. By-products of HS contain polyphenols as calyces with positive effects on the average daily gain and fat meat quality.

Using Plasma Etching to Access the Polymer Density Distribution and Diffusivity of Gel Particles

In this paper we examine the polymer density distribution of gel particles and its effect on solvent diffusivity through the polymer network. In order to access the inner particle regions, external polymer layers were removed by plasma etching, thus reducing them from the outside. Higher polymer densities after erosion showed internal heterogeneity, with the density increasing towards the center of the particles. An exponential decay polymer density model is proposed, and the spatial relaxation length measured. The diffusion of solvent through the particles, before and after the plasma oxidation, revealed a correlation between the diffusion coefficient and the internal density.