Low temperature growth of silicon nitride by electron cyclotron resonance plasma enhanced chemical vapour deposition

2001 ◽  
Vol 383 (1-2) ◽  
pp. 172-177 ◽  
Author(s):  
A.J. Flewitt ◽  
A.P. Dyson ◽  
J. Robertson ◽  
W.I. Milne
Keyword(s):  
Silicon Nitride ◽  
Low Temperature ◽  
Chemical Vapour Deposition ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
Electron Cyclotron ◽  
Temperature Growth ◽  
Resonance Plasma

Electron Cyclotron Resonance Plasma Chemical Vapour Deposition of Silicon Carbide Thin Films Using Ditertiary Butyl Selane

1994 ◽  
Vol 339 ◽  
Author(s):  
Mohamed Boumerzoug ◽  
Marcel Boudreau ◽  
Peter Mascher ◽  
Paul E. Jessop
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapour Deposition ◽  
Cyclotron Resonance ◽  
Vapour Deposition ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapour ◽  
Electron Cyclotron ◽  
Plasma Chemical ◽  
Plasma Chemical Vapour Deposition ◽  
Resonance Plasma

ABSTRACTSilicon carbide films were deposited by electron cyclotron resonance plasma chemical vapour deposition, using Ditertiary Butyl Silane (SiH2(C4H9)2), a non-corrosive organic compound, liquid at room temperature and stable in air, as precursor. Depositions were carried out in an Ar/H2 plasma at relatively low temperatures, below 400 °C. The influence of deposition parameters such as substrate temperature, gas flow rates, pressure, and microwave power, was systematically investigated and related to the Si:C ratios and the refractive index. The film composition was measured by Auger electron spectroscopy and the surface morphology was examined by scanning electron microscopy. The deposition rates and refractive indexes were extracted from the conventional ellipsometric functions, psi and delta. The results show that high quality silicon carbide of variable Si:C ratios and with very low levels of impurities are obtained.

Sign in / Sign up

Export Citation Format

Share Document