In this research, β-FeSi2 thin films were manufactured onto Si(111) wafer substrates through the usage of radio-frequency magnetron sputtering (RFMS) method at 2.66 × 10−1 Pa of sputtering pressure. The substrate temperatures were varied
at 500 °C, 560 °C, and 600 °C. The Raman lines of the β-FeSi2 fabricated at 500 °C revealed the peaks at the positions of ~174 cm−1, ~189 cm−1, ~199 cm−1, ~243 cm−1, ~278 cm−1,
and ~334 cm−1. For the higher substrate temperatures of 560 °C and 600 °C, the Raman peaks of ~189 cm−1, ~243 cm−1, and ~278 cm−1 were shifted toward higher Raman positions. The surface view of the films was observed
with several grains over the β-FeSi2 film surface at all substrate temperatures. The average grain size of the films for the samples deposited at 500 °C and 560 °C was in the range of 28 to 30 nm, where the size was enlarged to 36 nm at 600 °C of substrate
temperature. The root mean square roughness were 10.19 nm, 10.84 nm, and 13.67 nm for the β-FeSi2 film surface prepared at the substrate temperatures of 500 °C, 560 °C, and 600 °C, respectively. The contact angle (CA) values were
99.25°, 99.80°, and 102.00° for the created samples at 500 °C, 560 °C, and 600 °C, respectively. As the acquired CA values, all β-FeSi2 samples exhibited a hydrophobic property with CA in the
range of 90° to 150°. Consequently, the produced β-FeSi2 film surface employing the RFMS method indicated a potential to be employed in a hydrophobic coating application.