Effect of sputtering power on the properties of SiO2 films grown by radio frequency magnetron sputtering at room temperature

2021 ◽  
Vol 53 (1) ◽  
Author(s):  
Changjiang Zhao ◽  
Leran Zhao ◽  
Juncheng Liu ◽  
Zhigang Liu ◽  
Yan Chen
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Room Temperature ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Sio2 Films ◽  
Sputtering Power

Preparation and Characterization of 70TeO2-30WO3 Glass Thin Films by Radio-Frequency Magnetron Sputtering Method

2007 ◽  
Vol 124-126 ◽  
pp. 487-490 ◽  
Author(s):  
Jin Hyeok Kim ◽  
Ki Young Yoo ◽  
Sang Hoon Shin ◽  
Sun Hyun Youn ◽  
Jong Ha Moon
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Rate ◽  
Room Temperature ◽  
Processing Parameters ◽  
Radio Frequency Magnetron ◽  
Refractive Indices ◽  
Bandgap Energy ◽  
Radio Frequency Magnetron Sputtering

70TeO2-30WO3 glass thin films were fabricated using radio-frequency magnetron sputtering method and the effects of processing parameters on the growth rate, the surface morphologies, the crystallinity, and refractive indices of thin films have been investigated using AFM, XRD, SEM, and UV-Vis-IR spectrometer. Amorphous glass thin films with surface roughness of 4~6 nm could be formed only at room temperature and crystalline WO3 phase was observed in all the films prepared at above the room temperature. The deposition rate strongly depended on the processing parameters. It increased with increasing rf power and with decreasing processing pressure. Especially, it changed remarkably as varying the Ar/O2 gas flow ratio from 40sccm/0sccm to 0sccm/40sccm. When the films were formed in pure Ar atmosphere it shows a deposition rate of ~0.2 μm/h, whereas ~1.5 μm/h when the films was formed in pure O2 atmosphere. The refractive indices of TeO2-WO3glass thin films could be measured to be about 1.849~2.165 depending on the wavelength in the range of 500-1100 nm and the bandgap energy of glass thin film was ~3.34 eV.

MANIPULATING THE STRUCTURAL AND ELECTRICAL PROPERTIES OF ZINC OXIDE THIN FILMS BY CHANGING THE SPUTTERING POWER OF RADIO FREQUENCY MAGNETRON SPUTTERING

2017 ◽  
Vol 24 (Supp01) ◽  
pp. 1850006 ◽  
Author(s):  
YANG WANG ◽  
CHENGBIAO WANG ◽  
ZHIJIAN PENG ◽  
QI WANG ◽  
XIULI FU
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Interstitial Zinc ◽  
Sputtering Power

Oxygen-deficient zinc oxides thin films with different levels of defects were prepared by using radio frequency magnetron sputtering method with sintered zinc oxide disk as target at different sputtering powers. The composition, structure and electrical properties of the prepared films were investigated. Under the present conditions, all the obtained films possessed würtzite structure, which were growing preferentially along the [Formula: see text]-axis. The thickness of the films, the size of the zinc oxide grains and the content of Zn atoms increased with increasing sputtering power. In the films deposited at a sputtering power from 52[Formula: see text]W to 212[Formula: see text]W, the main defect was interstitial zinc. With increasing sputtering power, due to the enhanced number of interstitial zinc in the films, their room-temperature electrical resistivity would decrease, which was controlled by electron conduction. At increasing measurement temperature, their electrical resistivity would increase, owing to the decrease of defect concentration caused by oxidization.

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