The N-Si (Nitrogen-Silicon) system

1990 ◽  
Vol 11 (6) ◽  
pp. 569-573 ◽  
Author(s):  
O. N. Carlson
Keyword(s):  
Silicon System

The Gd−Si (Gadolinium-Silicon) system

1988 ◽  
Vol 9 (5) ◽  
pp. 574-578 ◽  
Author(s):  
A. B. Gokhale ◽  
G. J. Abbaschian
Keyword(s):  
Silicon System

Epitaxial phase transitions in the iron/silicon system

1993 ◽  
Vol 70-71 ◽  
pp. 559-563 ◽  
Author(s):  
H. von Känel ◽  
N. Onda ◽  
H. Sirringhaus ◽  
E. Müller-Gubler ◽  
S. Goncalves-Conto ◽  
...  
Keyword(s):  
Phase Transitions ◽  
Iron Silicon ◽  
Silicon System

THE CDF LAYER 00 DETECTOR

2001 ◽  
Vol 16 (supp01c) ◽  
pp. 1091-1093 ◽  
Author(s):  
TIMOTHY K. NELSON
Keyword(s):  
Impact Parameter ◽  
Support Structure ◽  
Physics Program ◽  
Silicon Sensors ◽  
Fine Pitch ◽  
Silicon System ◽  
The Impact ◽  
Radiation Tolerant

The CDF Layer 00 detector consists of single-sided silicon sensors assembled on the beampipe, forming the innermost of eight silicon layers in the CDF detector for Run II of the Fermilab Tevatron. Radiation tolerant p-in-n silicon with 25(50) μm implant(readout) pitch are mounted on a lightweight, cooled support structure and connect to electronics outside the tracking volume via long, fine-pitch cables. Layer 00 will significantly improve the impact parameter resolution and enhance the longevity of the silicon system, benefitting a large portion of the physics program for Run II.

The Li-Si (Lithium-Silicon) system

1990 ◽  
Vol 11 (3) ◽  
pp. 306-312 ◽  
Author(s):  
H. Okamoto
Keyword(s):  
Silicon System

High-density liquid-like component facilitates plastic flow in a model amorphous silicon system

2003 ◽  
Vol 806 ◽  
Author(s):  
Michael J. Demkowicz ◽  
Ali S. Argon
Keyword(s):  
Molecular Dynamics ◽  
Plastic Flow ◽  
Deformation Behavior ◽  
Strain Softening ◽  
Low Density ◽  
Unstressed State ◽  
Plastic Deformation Behavior ◽  
Silicon System ◽  
Amorphous Si ◽  
Dynamics Simulations

ABSTRACTMolecular dynamics simulations show that plastic deformation behavior of model Stillinger-Weber amorphous Si is very sensitive to the density of the initial unstressed state. Low-density systems exhibit a pronounced yield phenomenon, strain softening, and a dramatic drop in pressure during deformation at constant volume. This behavior is explained by the interplay in every system of the prevailing solid-like and liquid-like components, with the latter being denser and more amenable to plastic flow.

scholarly journals Photochemical Charge Separation at Particle Interfaces: The n-BiVO4–p-Silicon System

2015 ◽  
Vol 7 (10) ◽  
pp. 5959-5964 ◽  
Author(s):  
Yuxin Yang ◽  
Jiarui Wang ◽  
Jing Zhao ◽  
Benjamin A. Nail ◽  
Xing Yuan ◽  
...  
Keyword(s):  
Charge Separation ◽  
Silicon System

Production and test of the LHCf microstrip silicon system

2008 ◽  
Vol 596 (1) ◽  
pp. 85-87 ◽  
Author(s):  
L. Bonechi ◽  
O. Adriani ◽  
M. Bongi ◽  
G. Castellini ◽  
R. D’Alessandro ◽  
...  
Keyword(s):  
Silicon System

Transport of positrons in the electrically biased metal-oxide-silicon system

1997 ◽  
Vol 81 (4) ◽  
pp. 1943-1955 ◽  
Author(s):  
M. Clement ◽  
J. M. M. de Nijs ◽  
P. Balk ◽  
H. Schut ◽  
A. van Veen
Keyword(s):  
Metal Oxide ◽  
Silicon System ◽  
Metal Oxide Silicon
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