Electronic properties of diamond surfaces

2007 ◽  
pp. 77-104 ◽  
Author(s):  
J. Ristein ◽  
R. Graupner
Keyword(s):  
Electronic Properties ◽  
Diamond Surfaces

Electronic properties of plasma hydrogenated diamond surfaces: A microscopic study

2006 ◽  
Vol 15 (9) ◽  
pp. 1374-1377 ◽  
Author(s):  
B. Rezek ◽  
C.E. Nebel
Keyword(s):  
Electronic Properties ◽  
Microscopic Study ◽  
Diamond Surfaces

Electronic properties of hydrogen- and oxygen-terminated diamond surfaces exposed to the air

2009 ◽  
Vol 18 (5) ◽  
pp. 2041-2047 ◽  
Author(s):  
Liu Feng-Bin ◽  
Wang Jia-Dao ◽  
Chen Da-Rong ◽  
Yan Da-Yun
Keyword(s):  
Electronic Properties ◽  
Diamond Surfaces

Electronic properties of ultrananocrystalline diamond surfaces

2010 ◽  
Vol 96 (9) ◽  
pp. 092109 ◽  
Author(s):  
Simon Q. Lud ◽  
Martin Niedermeier ◽  
Philipp S. Koch ◽  
Paola Bruno ◽  
Dieter M. Gruen ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Diamond Surfaces ◽  
Ultrananocrystalline Diamond

Structural and electronic properties of nitrogen ion implanted ultra nanocrystalline diamond surfaces

2011 ◽  
Vol 110 (4) ◽  
pp. 044304 ◽  
Author(s):  
Kalpataru Panda ◽  
B. Sundaravel ◽  
B. K. Panigrahi ◽  
P. Magudapathy ◽  
D. Nandagopala Krishna ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Nanocrystalline Diamond ◽  
Diamond Surfaces ◽  
Structural And Electronic Properties ◽  
Nitrogen Ion ◽  
Ion Implanted

Electronic properties of single crystalline diamond surfaces

Carbon ◽  
1999 ◽  
Vol 37 (5) ◽  
pp. 793-799 ◽  
Author(s):  
L. Ley ◽  
R. Graupner ◽  
J.B. Cui ◽  
J. Ristein
Keyword(s):  
Electronic Properties ◽  
Single Crystalline ◽  
Diamond Surfaces

Electronic properties of diamond surfaces — blessing or curse for devices?

2000 ◽  
Vol 9 (3-6) ◽  
pp. 1129-1137 ◽  
Author(s):  
J. Ristein
Keyword(s):  
Electronic Properties ◽  
Diamond Surfaces

Reflection electron microscopy of as-grown diamond surfaces

1993 ◽  
Vol 51 ◽  
pp. 1006-1007
Author(s):  
Z.L. Wang ◽  
J. Bentley ◽  
R.E. Clausing ◽  
L. Heatherly ◽  
L.L. Horton
Keyword(s):  
Electron Microscopy ◽  
Synthetic Diamond ◽  
High Energy ◽  
Dark Field ◽  
Reverse Direction ◽  
Diamond Surfaces ◽  
Grain Sizes ◽  
Synthetic Diamonds ◽  
De Beers ◽  
Reflection Electron Microscopy

It has been found that the abrasion of diamond-on-diamond depends on the crystal orientation. For a {100} face, the friction coefficient for sliding along <011> is much higher than that along <001>. For a {111} face, the abrasion along <11> is different from that in the reverse direction <>. To interpret these effects, a microcleavage mechanism was proposed in which the {100} and {111} surfaces were assumed to be composed of square-based pyramids and trigonal protrusions, respectively. Reflection electron microscopy (REM) has been applied to image the microstructures of these diamond surfaces.{111} surfaces of synthetic diamond:The synthetic diamonds used in this study were obtained from the De Beers Company. They are in the as-grown condition with grain sizes of 0.5-1 mm without chemical treatment or mechanical polishing. By selecting a strong reflected beam in the reflection high-energy electron diffraction (RHEED) pattern, the dark-field REM image of the surface is formed (Fig. 1).

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Structure, dynamics and electronic properties of liquid and glassy GeSe2

1997 ◽  
Vol 222 (1-2) ◽  
pp. 348-353
Author(s):  
R Cappelletti
Keyword(s):  
Electronic Properties ◽  
Structure Dynamics
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