Frequency- and voltage-dependent dielectric properties and electrical conductivity of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes at room temperature

2013 ◽  
Vol 112 (4) ◽  
pp. 827-833 ◽  
Author(s):  
Selçuk Demirezen
2019 ◽  
Vol 45 (9) ◽  
pp. 11989-12000 ◽  
Author(s):  
Y. Slimani ◽  
B. Unal ◽  
E. Hannachi ◽  
A. Selmi ◽  
M.A. Almessiere ◽  
...  

2008 ◽  
Vol 63 (3-4) ◽  
pp. 199-202 ◽  
Author(s):  
Ahmet Faruk Ozdemir ◽  
Adnan Calik ◽  
Guven Cankaya ◽  
Osman Sahin ◽  
Nazim Ucar

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.


2015 ◽  
Vol 67 (5) ◽  
pp. 889-895 ◽  
Author(s):  
Ahmet Gümüş ◽  
Gülçin Ersöz ◽  
İbrahim Yücedağ ◽  
Sümeyye Bayrakdar ◽  
Şemsettin Altindal

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