Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes
2008 ◽
Vol 63
(3-4)
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pp. 199-202
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Keyword(s):
Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φb) and ideality factor (n) was studied by current-voltage (I-V) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the I-V characteristics move to lower currents due to an increase of φb with increasing indentation weight, while contacts showed a nonideal diode behaviour.
2009 ◽
Vol 404
(8-11)
◽
pp. 1558-1562
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2008 ◽
Vol 600-603
◽
pp. 1341-1344
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Keyword(s):
2018 ◽
Vol 15
(11)
◽
pp. 803-809
Keyword(s):
Keyword(s):