Study of nanosized copper-doped ZnO dilute magnetic semiconductor thick films for spintronic device applications

2017 ◽  
Vol 124 (1) ◽  
Author(s):  
Rayees Ahmad Zargar ◽  
Manju Arora ◽  
Riyaz Ahmed Bhat
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Thick Films ◽  
Magnetic Semiconductor ◽  
Spintronic Device ◽  
Device Applications ◽  
Doped Zno

Structural, optical and magnetic properties of a dilute magnetic semiconductor based on Ga-doped ZnO and Co

2020 ◽  
Vol 35 (10) ◽  
pp. 105003
Author(s):  
A Sh Asvarov ◽  
A V Butashin ◽  
V M Kanevsky ◽  
A E Muslimov ◽  
N S Perov ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Optical And Magnetic Properties ◽  
Doped Zno

Exciting Dilute Magnetic Semiconductor: Copper-Doped ZnO

2012 ◽  
Vol 26 (1) ◽  
pp. 187-195 ◽  
Author(s):  
S. Karamat ◽  
R. S. Rawat ◽  
T. L. Tan ◽  
P. Lee ◽  
S. V. Springham ◽  
...  
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Doped Zno

COMPARISON OF MAGNETIC PROPERTY OF Cu-, Al-, AND Li-DOPED ZnO DILUTE MAGNETIC SEMICONDUCTOR THIN FILMS

2008 ◽  
Vol 15 (01n02) ◽  
pp. 81-85 ◽  
Author(s):  
L. H. VAN ◽  
J. DING ◽  
M. H. HONG ◽  
Z. C. FAN ◽  
L. WANG
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Property ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Semiconductor Thin Films ◽  
Doped Zno ◽  
Lower Temperature

The properties of Cu -, Al -, and Li -doped ZnO dilute magnetic semiconductor (DMS) have been analyzed and compared. Zincite with wurtzite structures have been synthesized successfully on SiO 2 (101) and SiO 2 (110) substrates in both the Cu – ZnO and Li – ZnO DMS. The highly textured ZnO (002) peaks were able to form in the Cu – ZnO system at 400°C. However, it formed at even much lower temperature in the Li – ZnO system, that is only 25°C. ZnO (002) peaks in both systems were formed without any impurity phases. However, no crystalline structure is synthesized in the Al – ZnO system. The thin films formed are amorphous. The structural and related magnetic properties of the films were analyzed by XRD, AFM, and VSM. The films were found to be at their highest magnetism at the value of 3.1 emu/cm3 for Co – ZnO and 2.5 emu/cm3 for Li – ZnO , synthesized at 400°C, and under 1 × 10-4 Torr oxygen partial pressure.

Cobalt-doped ZnO – a room temperature dilute magnetic semiconductor

2005 ◽  
Vol 247 (1-4) ◽  
pp. 493-496 ◽  
Author(s):  
C.B. Fitzgerald ◽  
M. Venkatesan ◽  
J.G. Lunney ◽  
L.S. Dorneles ◽  
J.M.D. Coey
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Room Temperature ◽  
Magnetic Semiconductor ◽  
Doped Zno

Transition Metal Doped ZnO as a Host of Dilute Magnetic Semiconductor

2013 ◽  
Vol 3 (3) ◽  
pp. 333-356 ◽  
Author(s):  
Swarup Neogi ◽  
Aritra Banerjee ◽  
Sudipta Bandyopadhyay
Keyword(s):  
Transition Metal ◽  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Doped Zno ◽  
Metal Doped

Co-doped ZnO dilute magnetic semiconductor

2006 ◽  
Vol 35 (5) ◽  
pp. 852-856 ◽  
Author(s):  
John T. Prater ◽  
Shivaraman Ramachandran ◽  
Ashutosh Tiwari ◽  
Jagdish Narayan
Keyword(s):  
Dilute Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Doped Zno ◽  
Co Doped
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