scholarly journals An improved model for describing the net carrier recombination rate in semiconductor devices

2021 ◽  
Vol 128 (1) ◽  
Author(s):  
M. L. Inche Ibrahim ◽  
Anvar A. Zakhidov
NANO ◽  
2018 ◽  
Vol 13 (11) ◽  
pp. 1850129 ◽  
Author(s):  
Chujun Chen ◽  
Xia Xin ◽  
Jinniu Zhang ◽  
Gang Li ◽  
Yafeng Zhang ◽  
...  

To improve the high charge carrier recombination rate and low visible light absorption of {001} facets exposed TiO2 [TiO2(001)] nanosheets, few-layered MoS2 nanoparticles were loaded on the surfaces of TiO2(001) nanosheets by a simple photodeposition method. The photocatalytic activities towards Rhodamine B (RhB) were investigated. The results showed that the MoS2–TiO2(001) nanocomposites exhibited much enhanced photocatalytic activities compared with the pure TiO2(001) nanosheets. At an optimal Mo/Ti molar ratio of 25%, the MoS2–TiO2(001) nanocomposites displayed the highest photocatalytic activity, which took only 30[Formula: see text]min to degrade 50[Formula: see text]mL of RhB (50[Formula: see text]mg/L). The active species in the degradation reaction were determined to be h[Formula: see text] and [Formula: see text]OH according to the free radical trapping experiments. The reduced charge carrier recombination rate, enhanced visible light utilization and increased surface areas contributed to the enhanced photocatalytic performances of the 25% MoS2–TiO2(001) nanocomposites.


2018 ◽  
Vol 6 (5) ◽  
pp. 2295-2301 ◽  
Author(s):  
Xiangchao Ma ◽  
Xin Wu ◽  
Haoda Wang ◽  
Yucheng Wang

A Janus MoSSe monolayer is theoretically predicted to be a wide solar-spectrum water-splitting photocatalyst with a low carrier recombination rate.


2016 ◽  
Vol 63 (11) ◽  
pp. 4395-4401 ◽  
Author(s):  
Andrea Kraxner ◽  
Frederic Roger ◽  
Bernhard Loeffler ◽  
Martin Faccinelli ◽  
Evelin Fisslthaler ◽  
...  

2013 ◽  
Vol 210 (10) ◽  
pp. 2022-2027 ◽  
Author(s):  
P. Ščajev ◽  
S. Nargelas ◽  
K. Jarašiūnas ◽  
I. Kisialiou ◽  
E. Ivakin ◽  
...  

1990 ◽  
Vol 56 (21) ◽  
pp. 2083-2085 ◽  
Author(s):  
P. Wang ◽  
K. K. Lee ◽  
G. Yao ◽  
Y. C. Chen ◽  
R. G. Waters

2010 ◽  
Vol 247 (7) ◽  
pp. 1703-1706 ◽  
Author(s):  
Kęstutis Jarašiūnas ◽  
Tadas Malinauskas ◽  
Saulius Nargelas ◽  
Vytautas Gudelis ◽  
Juozas V. Vaitkus ◽  
...  

1988 ◽  
Vol 144 ◽  
Author(s):  
P. Grabbe ◽  
A. Scherer ◽  
K. Kash ◽  
R. Bhat ◽  
J. Harbison ◽  
...  

ABSTRACTWe report the first investigation of the effect of dry etching parameters on the sidewall carrier recombination rate of GaAs/AIGaAs and lnPilnGaAsP microstructures. Surface recombination was measured as a function of ion voltage and etching time. The increase in recombination rate due to etching can be reversed by subsequent chemical removal of the immediate sidewall layer. By monitoring the recovery in recombination rate as a function of the amount of sidewall layer removed, the effective damage depth is inferred.


2013 ◽  
Vol 210 (10) ◽  
pp. 2016-2021 ◽  
Author(s):  
Patrik Ščajev ◽  
Vytautas Gudelis ◽  
Alexandre Tallaire ◽  
Julien Barjon ◽  
Kęstutis Jarašiūnas

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