Distribution of deep levels in Si:Au by spectral analysis of deep-level transient spectroscopy

1998 ◽  
Vol 66 (3) ◽  
pp. 323-325 ◽  
Author(s):  
J. Yoshino ◽  
Y. Okamoto ◽  
J. Morimoto ◽  
T. Miyakawa
Keyword(s):  
Spectral Analysis ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by Deep Level Transient Spectroscopy

2021 ◽  
Author(s):  
Manuel Fregolent ◽  
Matteo Buffolo ◽  
Carlo de Santi ◽  
Sho Hasegawa ◽  
Junta Matsumura ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Carrier Capture ◽  
Transient Spectroscopy

Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy

2001 ◽  
Vol 82 (1-3) ◽  
pp. 91-94 ◽  
Author(s):  
P Muret ◽  
A Philippe ◽  
E Monroy ◽  
E Muñoz ◽  
B Beaumont ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
High Resolution ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy

Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS)

1987 ◽  
Vol 26 (Part 1, No. 10) ◽  
pp. 1634-1640 ◽  
Author(s):  
Jun Morimoto ◽  
Michihiro Fudamoto ◽  
Kenichiro Tahira ◽  
Tatsuo Kida ◽  
Seiji Kato ◽  
...  
Keyword(s):  
Spectral Analysis ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Transient Spectroscopy

Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 759-762
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Michael Krieger ◽  
Tsunenobu Kimoto
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Deep Levels ◽  
Total Density ◽  
Ion Etching ◽  
Initial Concentration ◽  
Grown Sample ◽  
Transient Spectroscopy ◽  
P Type

In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of as-etched p-type SiC is remarkably small due to compensation or deactivation of acceptors. These acceptors can be recovered to the initial concentration of the as-grown sample after annealing at 1000oC. However, various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC. The following defects are detected by Deep Level Transient Spectroscopy (DLTS): IN2 (EC – 0.35 eV), EN (EC – 1.6 eV), IP1 (EV + 0.35 eV), IP2 (HS1: EV + 0.39 eV), IP4 (HK0: EV + 0.72 eV), IP5 (EV + 0.75 eV), IP7 (EV + 1.3 eV), and EP (EV + 1.4 eV). These defects generated by RIE can be significantly reduced by thermal oxidation and subsequent annealing at 1400oC.

Spectral Analysis of Deep Level Transient Spectroscopy (SADLTS) of Deep Centers in CdTe Single Crystals

1988 ◽  
Vol 27 (Part 1, No. 12) ◽  
pp. 2256-2259 ◽  
Author(s):  
Jun Morimoto ◽  
Michihiro Fudamoto ◽  
Shuuji Tashiro ◽  
Masaaki Arai ◽  
Toru Miyakawa ◽  
...  
Keyword(s):  
Spectral Analysis ◽  
Single Crystals ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Centers ◽  
Transient Spectroscopy

Vacancies and deep levels in electron-irradiated 6HSiC epilayers studied by positron annihilation and deep level transient spectroscopy

2001 ◽  
Vol 90 (7) ◽  
pp. 3377-3382 ◽  
Author(s):  
A. Kawasuso ◽  
F. Redmann ◽  
R. Krause-Rehberg ◽  
T. Frank ◽  
M. Weidner ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Transient Spectroscopy
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