Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GalnNAs/GaAs Single Quantum Well Laser Diode

1998 ◽  
Vol 5 (2) ◽  
pp. 69-71 ◽  
Author(s):  
Takeshi Kitatani ◽  
Masahiko Kondow ◽  
Koji Nakahara ◽  
M. C. Larson ◽  
Kazuhisa Uomi
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Laser Diode ◽  
Threshold Current ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Quantum Well Laser

Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

1999 ◽  
Vol 597 ◽  
Author(s):  
T. Kitatani ◽  
M. Kondow ◽  
K. Nakahara ◽  
K. Uomi ◽  
T. Tanaka
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Laser Diode ◽  
Continuous Wave ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

AbstractThrough optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

Effect of Varying Quantum Well Thickness on the Performance of InGaN∕GaN Single Quantum Well Laser Diode

2008 ◽  
Author(s):  
S. M. Thahab ◽  
H. Abu Hassan ◽  
Z. Hassan ◽  
H. B. Senin ◽  
G. Carini ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Widely separate wavelength switching of single quantum well laser diode by injection‐current control

1986 ◽  
Vol 49 (24) ◽  
pp. 1629-1631 ◽  
Author(s):  
Yasunori Tokuda ◽  
Noriaki Tsukada ◽  
Kenzo Fujiwara ◽  
Koichi Hamanaka ◽  
Takashi Nakayama
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Current Control ◽  
Injection Current ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Wavelength Switching ◽  
Quantum Well Laser

Very low threshold current AlGaInp/GaxIn1−xP strained single quantum well visible laser diode

1990 ◽  
Vol 26 (17) ◽  
pp. 1375 ◽  
Author(s):  
T. Katsuyama ◽  
I. Yoshida ◽  
J. Shinkai ◽  
J. Hashimoto ◽  
H. Hayashi
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Threshold Current ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Visible Laser ◽  
Low Threshold
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