Pulsed laser deposition temperature effects on strontium-substituted hydroxyapatite thin films for biomedical implants

2020 ◽  
Vol 36 (6) ◽  
pp. 537-551 ◽  
Author(s):  
Angela De Bonis ◽  
Vuk Uskoković ◽  
Katia Barbaro ◽  
Inna Fadeeva ◽  
Mariangela Curcio ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Temperature Effects ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Biomedical Implants

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

scholarly journals Effects of Deposition Temperature and Annealing Process on PZT Thin Films Prepared by Pulsed Laser Deposition

2002 ◽  
Vol 3 (1) ◽  
pp. 14-17
Author(s):  
Min-Chul Kim ◽  
Ji-Won Choi ◽  
Chong-Yun Kang ◽  
Seok-Jin Yoon ◽  
Hyun-Jai Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Laser Deposition ◽  
Pzt Thin Films

scholarly journals Nanostructured LaFeO3 /Si Thin Films Grown by Pulsed Laser Deposition

2021 ◽  
Author(s):  
Mateusz Jędrusik ◽  
Christian Turquat ◽  
Łukasz Cieniek ◽  
Agnieszka Kopia ◽  
Christine Leroux
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Oxygen Vacancies ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Chemical Formula ◽  
Iron Deficient ◽  
Exposed Facets

The orthorhombic LaFeO3 thin films grown by pulsed laser deposition on silicon showed nano-structuration of their surface and preferential crystallographic exposed facets, depending on the deposition temperature. The LaFeO3 film deposited at 850°C has two types of grain termination, flat or tip-like, corresponding to two different growth directions, respectively [110] and [200]. Due to the shape of the termination, the same {110} facets are exposed. The LaFeO3 is iron deficient and consequently contains oxygen vacancies, the exact chemical formula being LaFe0.82O3-delta.

Effect of the deposition temperature on the properties of iridium thin films grown by means of pulsed laser deposition

1999 ◽  
Vol 14 (8) ◽  
pp. 3241-3246 ◽  
Author(s):  
M. A. El Khakani ◽  
B. Le Drogoff ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Laser Intensity ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Room Temperature Resistivity ◽  
Average Value ◽  
Average Grain Size ◽  
Krf Excimer Laser

Pulsed laser deposition (PLD) of Ir thin films has been achieved by ablating an iridium target with a KrF excimer laser. The iridium deposition rate was investigated, over the (0.4–2) × 109 W/cm2 laser intensity range, and found to reach its maximum at (1.6 ± 0.1) × 109 W/cm2. At this laser intensity, the PLD Ir films were deposited at substrate deposition temperatures ranging from 20 to 600 °C. The PLD Ir films exhibited a (111) preferentially oriented polycrystalline structure with their average grain size increasing from about 10 to 30 nm as the deposition temperature was raised from 20 to 600 °C. Their mean surface microroughness (Ra) was found to change from an average value of about 1 nm in the 20–400 °C temperature range to a value of about 4.5 nm at 600 °C. As the deposition temperature is varied from 20 to 600 °C, not only does the stress of PLD Ir films change drastically from highly compressive (−2.5 GPa) to tensile (+0.8 GPa), but their room-temperature resistivity also gradually decreases in the 20–400 °C range and stabilizes for higher temperatures. In the 400–600 °C range, the resistivity of PLD Ir films was as low as 6.0 ± 0.2 μΩ cm, which is very close to the iridium bulk value of 5.1 μΩ cm. Thus, PLD Ir films exhibiting not only the lowest resistivity but also a nearly zero stress level can be grown at a deposition temperature of about 400 °C. The resistivity of the PLD Ir films can be described by a grain boundary scattering model.

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