Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcogenides

Author(s):  
Gautam Gaddemane ◽  
Sanjay Gopalan ◽  
Maarten L. Van de Put ◽  
Massimo V. Fischetti
2019 ◽  
Vol 21 (21) ◽  
pp. 11359-11366 ◽  
Author(s):  
Armando Pezo ◽  
Matheus P. Lima ◽  
Marcio Costa ◽  
Adalberto Fazzio

Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport.


2020 ◽  
Vol 8 (13) ◽  
pp. 4432-4440 ◽  
Author(s):  
Xiangyu Zhou ◽  
Haibo Shu ◽  
Qiuqi Li ◽  
Pei Liang ◽  
Dan Cao ◽  
...  

Electron injection leads to the transition of two-dimensional MoX2 (X = S, Se, and Te) nanosheets from the semiconducting H phase to semimetallic T′ phase.


Author(s):  
Ruining Wang ◽  
Chen-Dong Jin ◽  
Hu Zhang ◽  
Ru-Qian Lian ◽  
Xingqiang Shi ◽  
...  

Two-dimensional transition metal dichalcogenides (TMDCs) are promising in spintronics due to their spin-orbit coupling, but the intrinsic non-magnetic properties limit their further developments. Here, we focus on the energy landscapes...


2022 ◽  
Author(s):  
Hui-Kai He ◽  
Yong-Bo Jiang ◽  
Jun Yu ◽  
Zi-Yan Yang ◽  
Chao-Fan Li ◽  
...  

Two-dimensional phase engineering of transition metal dichalcogenides have received increasing attention in recent years due to their atomically thin nature and polymorphism. Here, we first realize an electric-field-induced controllable phase...


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