Modeling of a compressively strained quantum well laser based on InxGa1−xSb/GaSb and emitting at 2 μm

Author(s):  
S. Dehimi ◽  
L. Dehimi ◽  
B. Mebarki ◽  
F. Pezzimenti
2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.


1994 ◽  
Vol 64 (2) ◽  
pp. 158-160 ◽  
Author(s):  
Hidenao Tanaka ◽  
Jun‐ichi Shimada ◽  
Yoshio Suzuki

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2521-2523 ◽  
Author(s):  
Akinori Ubukata ◽  
Jie Dong ◽  
Hiroshi Masusaki ◽  
Takayuki Satoh ◽  
Koh Matsumoto

1988 ◽  
Vol 53 (15) ◽  
pp. 1378-1380 ◽  
Author(s):  
I. Suemune ◽  
L. A. Coldren ◽  
M. Yamanishi ◽  
Y. Kan

1996 ◽  
Vol 98 (8) ◽  
pp. 737-740 ◽  
Author(s):  
W.J. Fan ◽  
M.F. Li ◽  
T.C. Chong ◽  
J.B. Xia

Sign in / Sign up

Export Citation Format

Share Document