High temperature and wide range 40-GHz passive mode-ocking operation of an AlGaInAs 1.55-μm strained quantum well laser

2008 ◽  
Author(s):  
Lianping Hou ◽  
Piotr Stolarz ◽  
Charlie N. Ironside ◽  
Marc Sorel ◽  
Catrina Bryce
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Passive Mode ◽  
Quantum Well Laser ◽  
Wide Range ◽  
Strained Quantum Well

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

scholarly journals Rate Equation Modelling of Nonlinear Dynamics in Directly Modulated Multiple Quantum Well Laser Diodes

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 355-360 ◽  
Author(s):  
Stephen Bennett ◽  
Christopher M. Snowden ◽  
Stavros Iezekiel
Keyword(s):  
Nonlinear Dynamics ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Period Doubling ◽  
Rate Equations ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Wide Range ◽  
Multiple Quantum Well Laser ◽  
Good Agreement

A theoretical (using rate equations) and experimental study of the nonlinear dynamics of a distributed feedback multiple quantum well laser diode is presented. The analysis is performed under direct modulation. Period doubling and period tripling are identified in both the measurements and simulations. Period doubling is found over a wide range of modulation frequencies in the laser. Computational results using rate equations show good agreement with the experimental results.

Highly efficient TE/TM mode switching of GaAsP/AlGaAs strained quantum‐well laser diodes

1994 ◽  
Vol 64 (2) ◽  
pp. 158-160 ◽  
Author(s):  
Hidenao Tanaka ◽  
Jun‐ichi Shimada ◽  
Yoshio Suzuki
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Mode Switching ◽  
Quantum Well Laser ◽  
Highly Efficient ◽  
Tm Mode ◽  
Strained Quantum Well

Hydrogen Chloride Gas Monitoring at 1.74 µm with InGaAs/InGaAsP Strained Quantum Well Laser

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2521-2523 ◽  
Author(s):  
Akinori Ubukata ◽  
Jie Dong ◽  
Hiroshi Masusaki ◽  
Takayuki Satoh ◽  
Koh Matsumoto
Keyword(s):  
Quantum Well ◽  
Hydrogen Chloride ◽  
Gas Monitoring ◽  
Quantum Well Laser ◽  
Strained Quantum Well
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