Preparation and properties of Pb(Zr, Ti)O3 ferroelectric thin films and compositionally graded thin films on LaNiO3/Si substrates

2007 ◽  
Vol 21 (1-4) ◽  
pp. 641-644
Author(s):  
Li Jiankang ◽  
Yao Xi
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Si Substrates

Effective Direct Piezoelectric Constants in Epitaxial Ferroelectric Films as MEMS Sensors

2005 ◽  
Vol 881 ◽  
Author(s):  
Jun Ouyang ◽  
R. Ramesh ◽  
A. L. Roytburd
Keyword(s):  
Thin Films ◽  
Orientation Dependence ◽  
Ferroelectric Thin Films ◽  
Piezoelectric Constant ◽  
Mems Sensors ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Mems Sensor ◽  
Sensor Devices ◽  
Piezoelectric Constants

AbstractFollowing our previous work on the converse piezoelectric constant- in epitaxial ferroelectric films for MEMS actuator applications, the orientation dependence of the direct piezoelectric constants , and are generally formulated, which can help to predict and optimize the performance of piezoelectric MEMS sensor devices based on ferroelectric thin films. Numerical results are obtained and discussed for Pb(ZrxTi1-x)O3 thin films grow on Si substrates with various compositions and structures.

Ti-site Substitution Using the Higher-valent Cation for Enhancing the Ferroelectric Properties of Nd3+−substituted Bismuth Titanate Thin Films

2003 ◽  
Vol 784 ◽  
Author(s):  
Hiroshi Uchida ◽  
Seiichiro Koda ◽  
Hirofumi Matsuda ◽  
Takashi Iijima ◽  
Takayuki Watanabe ◽  
...  
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Chemical Solution Deposition ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Si Substrates

ABSTRACTTi-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd)4Ti3O12(BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi3.50Nd0.50)1-(x/12)(Ti3.00-xVx)O15(x= 0 ∼ 0.09), were fabricated on (111)Pt/Ti/ SiO2/(100)Si substrates using a chemical solution deposition (CSD) technique. V5+-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V5+-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.

Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films Prepared by RF Magnetron Sputtering

2010 ◽  
Vol 434-435 ◽  
pp. 296-299
Author(s):  
Jian Ping Yang ◽  
Xing Ao Li ◽  
An You Zuo ◽  
Zuo Bin Yuan ◽  
Zhu Lin Weng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Growth Behavior ◽  
Ferroelectric Thin Films ◽  
Si Substrates ◽  
Grain Growth Behavior

Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.

Evaluation of Ferroelectricity in MFIS Type Capacitor Using Pulsed C-V Measurements

1999 ◽  
Vol 596 ◽  
Author(s):  
Norifumi Fujimura ◽  
Takeshi Yoshimura ◽  
Taichiro Ito
Keyword(s):  
Thin Films ◽  
Space Charge ◽  
Leakage Current ◽  
Remanent Polarization ◽  
Interfacial Polarization ◽  
Ferroelectric Thin Films ◽  
Real Component ◽  
Simple Method ◽  
Si Substrates ◽  
Ferroelectric Layer

AbstractWe have been proposing YMnO3 with low remanent polarization and dielectric permittivity as a transistor type FeRAM. Conventional C-V measurements are normally used to evaluate the ferroelectricity of ferroelectric thin films on Si substrates. For ferroelectric thin films with low polarization, however, there are some issues to understand the C-V hysteresis. For example, interfacial polarization and space charge affect the C-V hysteresis. The effect of interfacial polarization on C-V behavior was calculated assuming the connection of ferroelectric and dielectric layers with different resistivity. If a ferroelectric layer with a leakage current of 1×10-6 A/cm2 is connected to the dielectric layer with a leakage current of 1×10-9 A/cm2, a charge density of 10-9 C/cm2 should be generated in the period of 0.2 sec. Space charge should have a longer time constant for accumulating the charge. Pulsed C-V measurement must be effective to avoid these issues. This paper proposes a simple method to evaluate the real component of ferroelectricity in the C-V hysteresis using YMnO3 or ZnO:Li with very low remanent polarization.

Research on PMnN-PZT Ferroelectric Thin Films on Silicon Substrates

2012 ◽  
Vol 157-158 ◽  
pp. 241-244
Author(s):  
Tao Zhang ◽  
Hong Wei Ma ◽  
Min Li ◽  
Bai Hong Li ◽  
Ping Liu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Ternary Compound ◽  
Ferroelectric Thin Films ◽  
Silicon Substrates ◽  
Lattice Structures ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Pzt Ferroelectric Thin Films ◽  
Quench Method

The PZT-based ferroelectric thin films own excellent properties, such as good ferroelectricity and excellent piezoelectricity, and the ternary compound PZT-based thin films especially own more excellent properties, which are available to be widely applied in the fabrications of electromechanical devices. However, how to deposit multi-composition PZT-based thin films is a difficult technology. In this paper, the Pb(Mn1/3,Nb2/3)O3-PbZrO3- PbTiO3((PMnN-PZT)) ternary compound thin films are studied on, The thin films are deposited on Si substrates by the magnetron sputtering method, in which the same ratio of PZ/PT=52:48(PZT(52/48)) and the heterostructure substrates of SrRuO3(SRO)/Pt(111)/Ti /SiO2/Si(100) are adopted, and the quench method is always used after the depositions for the post heat treatments. The lattice structures, the surface and the ferroelectricity of thin films are characterized. The results show that the doping of PMnN with 6% mol percent is proper to obtain excellent PMnN-PZT ferroelectric thin films, and the doping of PMnN effectively improve the ferroelectricity of PZT thin films.

scholarly journals Pt/Ti/SiO2/Si substrates

1995 ◽  
Vol 10 (6) ◽  
pp. 1508-1515 ◽  
Author(s):  
G.R. Fox ◽  
S. Trolier-McKinstry ◽  
S.B. Krupanidhi ◽  
L.M. Casas
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Defect Formation ◽  
Ferroelectric Film ◽  
Film Deposition ◽  
Ferroelectric Thin Films ◽  
Adhesion Layer ◽  
Si Substrates

Pt/Ti/SiO2/Si structures have been studied to investigate the structural, chemical, and microstructural changes that occur during annealing. Grain growth of the as-deposited Pt columns was observed after annealing at 650 °C, and extensive changes in the Pt microstructure were apparent following a 750 °C anneal for 20 min. In addition, two types of defects were identified on the surfaces of annealed substrates. Defect formation was retarded when the surface was covered with a ferroelectric film. Concurrent with the annealing-induced Pt microstructure changes, Ti from the adhesion layer between the Pt and the SiO2 migrated into the Pt layer and oxidized. It was shown with spectroscopic ellipsometry and Auger electron spectroscopy that for long annealing times, the titanium oxide layer can reach the Pt surface. Consequently, at the processing temperatures utilized in preparing many ferroelectric thin films, the substrate is not completely inert or immobile. The changes associated with Ti migration could be especially problematic in techniques that require the substrate to be heated prior to film deposition.

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