Bi4Ti3O12 and Bi3.25La0.75Ti3O12 Thin Films Prepared by RF Magnetron Sputtering

2010 ◽  
Vol 434-435 ◽  
pp. 296-299
Author(s):  
Jian Ping Yang ◽  
Xing Ao Li ◽  
An You Zuo ◽  
Zuo Bin Yuan ◽  
Zhu Lin Weng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Growth Behavior ◽  
Ferroelectric Thin Films ◽  
Si Substrates ◽  
Grain Growth Behavior

Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4Ti3O12 (BTO) and Bi3.25La0.75Ti3O12 (BLT) targets with 50-mm diameter and 5-mm thickness. The microstructure and ferroelectric properties of thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were different in these two kinds of film, the effects of La doping in the BLT thin film were very obvious.

Bi4-xLaxTi3O12 Ferroelectric Thin Films Prepared by RF Magnetron Sputtering

2008 ◽  
Vol 368-372 ◽  
pp. 109-111
Author(s):  
Xing Ao Li ◽  
Zu Li Liu ◽  
An You Zuo ◽  
Zuo Bin Yuan ◽  
Jian Ping Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Grain Growth ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Growth Behavior ◽  
Ferroelectric Thin Films ◽  
Si Substrates ◽  
Grain Growth Behavior

Bi4-xLaxTi3O12 (BLT) ferroelectric thin films were deposited on Pt/Si substrates by RF magnetron sputtering with Bi4-xLaxTi3O12 (x=0.5, 0.75, 1) targets with 50-mm diameter and 5-mm thickness. The effects of La contents on microstructure and ferroelectric properties of Bi4-xLaxTi3O12 thin films were investigated. The grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on the La contents in the BLT thin films.

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 105-106 ◽  
pp. 259-262 ◽  
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
A.H. Cai ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

Electrical Characteristics and Microstructures of Ce-Doped Bi4Ti3O12 Films

2008 ◽  
Vol 368-372 ◽  
pp. 91-94
Author(s):  
S. Chen ◽  
A.H. Cai ◽  
X.A. Mei ◽  
Chong Qing Huang ◽  
W.K. An ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Coercive Field ◽  
Marked Improvement ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates

Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique. The structures and the ferroelectric properties of the films were investigated. Ce doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 100 kV/cm, Pr and Ec of the BCT (x = 0.8) film annealed at 650 oC are 20.5 μC/cm2 and 60 KV/cm, respectively. However, after 3 × 1010 switching cycles, 20% degradation of 2Pr is observed in the film.

Improvement in Ferroelectric Properties of Sol-Gel Derived SrBi2Ta2O9 thin films with seeding layers

2002 ◽  
Vol 718 ◽  
Author(s):  
Ching-Chich Leu ◽  
Chao-Hsin Chien ◽  
Ming-Jui Yang ◽  
Ming-Che Yang ◽  
Tiao-Yuan Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Strontium Bismuth Tantalate ◽  
Seeding Layer ◽  
Si Substrates ◽  
Nucleation Sites

AbstractThe effects of a seeding layer, which was deposited on Pt/TiO2/SiO2/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O2 ambient. The remanent polarization (2Pr) improves from 12.1 to 18.8 μC/cm2 with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700°C for 10min depicts a higher 2Pr value (12.9 μC/cm2 (@5V) than that of the un-seeded films crystallized at 750°C for 1min.

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2012 ◽  
Vol 512-515 ◽  
pp. 1325-1328
Author(s):  
R.F. Liu ◽  
X.A. Mei ◽  
M. Chen ◽  
C.Q. Huang ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization ( Pr ) and coercive field ( Ec ) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively. After 3 × 1010 switching cycles, 20% degradation of Pr is observed in the film.

Ferroelectric and Electrical Behavior of Bi4-xNdxTi3O12 Thin Films

2013 ◽  
Vol 537 ◽  
pp. 130-133
Author(s):  
C.Q. Huang ◽  
X.B. Liu ◽  
X.A. Mei ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Electrical Behavior ◽  
Si Substrates ◽  
Xrd Studies

Nd2O3-doped bismuth titanate (Bi4-xNdxTi3O12: BNT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BNT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the BNT Film with x=0.8 were 25μC/cm2 and 55KV/cm , respectively. After 3×1010 switching cycles, 15% degradation of Pr is observed in the film.

Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films

2011 ◽  
Vol 412 ◽  
pp. 294-297
Author(s):  
Min Chen ◽  
X.A. Mei ◽  
A.H. Cai ◽  
J. Liu ◽  
Chong Qing Huang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Xrd Studies

Eu2O3-doped bismuth titanate (Bi4-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the BET Film with x=0.8 were 20μC/cm2 and 65KV/cm , respectively. After 3×1010 switching cycles, 15% degradation of Pr is observed in the film.

Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 177 ◽  
pp. 197-200
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
A.H. Cai ◽  
J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Eu2O3-doped bismuth titanate (Bi1-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0.0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (Pr) and coercive field (Ec) of the BET Film with x=0.75 were above 30μC/cm2 and 85KV/cm , respectively.

scholarly journals The Effect of Oxygen Mixing Percentage on Structural, Optical and Electrical Properties of ZnTiO3 Thin-films Grown by Rf Magnetron Sputtering.

2021 ◽  
Author(s):  
srinivasa varaprsad H ◽  
sridevi P. V ◽  
Satya Anuradha M ◽  
Srinivas Pattipaka ◽  
pamu D
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Thermionic Emission ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Atomic Force ◽  
Excitation Coefficient ◽  
Effect Of Oxygen

Abstract Perovskites are important composites in the area of multidisciplinary applications. It is achieved by carefully choosing and tuning the properties of the thin-film at the deposition. In this paper, ZnTiO3 (ZTO) thin-films were being deposited on quartz and N-Si substrates by RF magnetron sputtering. The thin-films were developed at room temperature, oxygen percentage levels varying from 0 to 100, and annealed at 600oC. The electrical, optical, morphological, and structural properties were analyzed as a function of oxygen mixing percentage (OMP). The crystallinity of the cubic structured ZTO thin-film is found to be high at 25 OMP, and it is gradually decreased with increased OMP. The surface morphology of the thin-film is observed, and roughness is measured from the atomic force microscope. Raman Spectroscopy investigated the phase formation and the vibrational modes of the thin-film with their spectral de-convolution. The ZTO thin-films optical properties were investigated using transmittance spectra. The ZTO thin-film indicated the highest refractive index of 2.46, at 633nm with optical bandgap values of 3.57 eV, with a thickness of 145nm and 25 OMP. The refractive index, thin-film thickness, and excitation coefficient were analyzed using the Swanepoel envelope technique. Electrical characteristics of ZTO thin-film are measured from the optimized conditions of the thin-film with conventional thermionic emission (TE) technique.

Ferroelectric Properties and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 281-284
Author(s):  
Min Chen ◽  
A.H. Cai ◽  
X.A. Mei ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Large Leakage Current ◽  
Ferroelectric Hysteresis

Pr6O11-doped bismuth titanate (BixPryTi3O12: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.06, 0.3, 1.2 and 1.5, ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with y=0.6 and 0.9, ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Film with y=0.9 were above 35μC/cm2 and 80KV/cm , respectively. After 3×1010 switching cycles, 20% degradation of 2Pr is observed in the film with y=0.9.

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