Nanocrystalline wurtzite Si–nickel silicide composite thin films with large band gap and high resistivity

2010 ◽  
Vol 46 (8) ◽  
pp. 2672-2677 ◽  
Author(s):  
Md. Ahamad Mohiddon ◽  
M. Ghanashyam Krishna
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Nickel Silicide ◽  
High Resistivity ◽  
Composite Thin Films

Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Buffer Layer ◽  
Low Cost ◽  
Incident Light ◽  
High Resistivity ◽  
Short Wavelength Range ◽  
Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

Bandgap Engineering in Indium SulfideThin Films by Tin Mixing

2007 ◽  
Vol 1012 ◽  
Author(s):  
Meril Mathew ◽  
C. Sudha Kartha ◽  
K.P. Vijayakumar ◽  
John Elgin ◽  
Parameswar Hari
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Buffer Layer ◽  
Short Circuit ◽  
Wide Band ◽  
Synthesis Process ◽  
High Resistivity ◽  
Chemical Spray Pyrolysis ◽  
Wide Band Gap ◽  
Soda Lime Glass Substrate

AbstractIn2S3 thin films appear to be a promising candidate for photovoltaic applications due to its stability, wide band gap and photosensitivity. The optical band gap value of Indium sulfide (In2S3) thin films reported in the literature varies from 2.0 eV to 2.4 eV following their synthesis process. These values are too small for an application as buffer layer in solar cells. In Present work, we report that incorporation of Sn using [SnCl4.5H2O] could increase the bandgap to wider ranges. In2S3/Sn thin films were deposited on soda lime glass substrate using chemical spray pyrolysis (CSP) technique. The spraying solution contained indium chloride (InCl3), thiourea [CS(NH2)2] and [SnCl4.5H2O]. Studies were done on films prepared using different Sn/In ratios. Depth profile using x-ray photoelectron spectroscopy showed that incorporation of Sn increased the concentration of oxygen in the samples. Band gap of the films increased with increase in Sn/In ratios. Depending on the ratios, bandgap could be varied from 2.72 eV to 3.78 eV. At lower mixing levels wide band gap low resistive In2S3/Sn films could be obtained which is highly useful for buffer layer applications. Low resistive buffer layer will decrease the series resistance of the cell and wider band gap will improve light transmission in the blue wavelength, both these factors help in increasing the short circuit current of the photovoltaic cell. Samples having higher Sn/In ratios showed wider band gap (up to3.78 eV).Though the samples had very high bandgap and high resistivity these samples were highly photosensitive [(IL-ID)/ID = 11,000]. The results proved that tin incorporation modified the band gap and electrical properties of the In2S3/Sn films favorably over wider ranges making it highly suitable for different optoelectronic applications.

Semiconducting composite oxide Y2CuO4–5CuO thin films for investigation of photoelectrochemical properties

2014 ◽  
Vol 43 (22) ◽  
pp. 8523-8529 ◽  
Author(s):  
Sohail Ahmed ◽  
Muhammad Adil Mansoor ◽  
Muhammad Mazhar ◽  
Tilo Söhnel ◽  
Hamid Khaledi ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Photocurrent Density ◽  
Photoelectrochemical Properties ◽  
Composite Oxide ◽  
Composite Thin Films

Y2CuO4–5CuO composite thin films having a band gap of 1.82 eV and a photocurrent density of 9.85 μA cm−2 at 0.8 V have been deposited from a solution of precursor 1 by AACVD.

scholarly journals Optical band gap and conductivity measurements of polypyrrole-chitosan composite thin films

2011 ◽  
Vol 30 (1) ◽  
pp. 93-100 ◽  
Author(s):  
Mahnaz M. Abdi ◽  
H. N. M. Ekramul Mahmud ◽  
Luqman Chuah Abdullah ◽  
Anuar Kassim ◽  
Mohamad Zaki Ab. Rahman ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Conductivity Measurements ◽  
Composite Thin Films ◽  
Chitosan Composite

Effect of synergic cooperation on optical and photoelectrochemical properties of CeO2–MnO composite thin films

2016 ◽  
Vol 40 (6) ◽  
pp. 5177-5184 ◽  
Author(s):  
Muhammad Adil Mansoor ◽  
Muhammad Mazhar ◽  
Mehdi Ebadi ◽  
Huang Nay Ming ◽  
Mohd Asri Mat Teridi ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Band Gap ◽  
Photoelectrochemical Properties ◽  
Composite Thin Films

Low-temperature (475 °C) fabrication of CeO2–MnO composite thin films having a band gap of 2.5 eV by AACVD.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

Wide Band-Gap Kesterite Thin Films for Photovoltaic Applications

2018 ◽  
Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Photovoltaic Applications
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