scholarly journals Synthesis, characterisation and thermal behaviour of Cu-based nano-multilayer

Author(s):  
M. Czagány ◽  
D. Varanasi ◽  
A. Sycheva ◽  
D. Janovszky ◽  
D. Koncz-Horváth ◽  
...  

AbstractCu/AlN–Al2O3 nano-multilayer (NML) was deposited by magnetron sputtering method on 42CrMo4 steel samples, starting with a 15 nm AlN–Al2O3 layer and followed by 200 alternating layers of 5 nm thick Cu and 5 nm thick AlN–Al2O3 layers. The microstructure and thermal behaviour of the as-deposited and heat-treated multilayer was studied. Starting from about 400 °C, extensive coarsening of Cu nanocrystallites and the migration of Cu within the multilayer were observed via solid-state diffusion. Part of the initial Cu even formed micron-sized reservoirs within the NML. Due to increased temperature and to the different heat expansion coefficients of Cu and the AlN–Al2O3, the latter cracked and Cu appeared on the top surface of the NML at around 250 °C. Below 900 °C, the transport of Cu to the top surface of the NML probably took place as a solid-state flow, leading to faceted copper micro-crystals. However, above 900 °C, the Cu micro-crystals found on the top of the NML have rounded shape, so they were probably formed by pre-melting of nano-layered Cu due to its high specific surface area in the NML. Even if the Cu crystals appear on the top surface of the NML via solid-state flow without pre-melting, the Cu crystals on the top surface of the NML can be potentially used in joining applications at and above 250 °C.

2005 ◽  
Vol 502 ◽  
pp. 461-466
Author(s):  
Masakatsu Maeda ◽  
Kazuyuki Tenyama ◽  
Toshiya Shibayanagi ◽  
Masaaki Naka

The microstructure of the solid-state diffusion bonded interfaces of silicon carbide (SiC) and titanium aluminide (TiAl) were investigated. A 100-µm-thick Ti-48at%Al foil was inserted between two SiC specimens and then heat-treated in vacuum. The interfacial microstructure has been analyzed by scanning electron microscopy, electron probe microanalysis and X-ray diffractometry. Four layers of reaction products are formed at the interface by diffusion bonding: a layer of TiC adjacent to SiC followed by a diphase layer of TiC+Ti2AlC, a layer of Ti5Si3CX containing Ti2AlC particles and a layer of TiAl2. However, the TiAl2 layer is formed during cooling. The actual phase sequence at the bonding temperatures of 1573 K and 1673 K are described as SiC/TiC/(TiC+ Ti2AlC)/(Ti5Si3CX+Ti2AlC)/Ti1-XAl1+X/TiAl and SiC/TiC/(TiC+Ti2AlC)/(Ti5Si3CX+Ti2AlC)/Ti5Al11 /Ti1-XAl1+X/TiAl, respectively. The phase sequences are successfully expressed on the basis of the Ti-Al-Si-C quaternary chemical potential diagram.


2002 ◽  
Vol 17 (1) ◽  
pp. 52-59 ◽  
Author(s):  
N.F. Gao ◽  
Y. Miyamoto

The joining of a Ti3SiC2 ceramic with a Ti–6Al–4V alloy was carried out at the temperature range of 1200–1400 °C for 15 min to 4 h in a vacuum. The total diffusion path of joining was determined to be Ti3SiC2/Ti5Si3Cx/Ti5Si3Cx + TiCx/TiCx/Ti. The reaction was rate controlled by the solid-state diffusion below 1350 °C and turned to the liquid-state diffusion controlled with a dramatic increase of parabolic rate constant Kp when the temperature exceeded 1350 °C. The TiCx tended to grow at the boundarywith the Ti–6Al–4V alloy at a higher temperature and longer holding time. TheTi3SiC2/Ti–6Al–4V joint is expected to be applied to implant materials.


2016 ◽  
Vol 686 ◽  
pp. 794-802 ◽  
Author(s):  
Yuan Yuan ◽  
Dajian Li ◽  
Yuanyuan Guan ◽  
Hans J. Seifert ◽  
Nele Moelans

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