Low temperature synthesis of sol–gel derived Al-doped ZnO thin films with rapid thermal annealing process

2009 ◽  
Vol 21 (6) ◽  
pp. 589-594 ◽  
Author(s):  
Hua Wang ◽  
Mu-hui Xu ◽  
Ji-wen Xu ◽  
Ming-fang Ren ◽  
Ling Yang
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Sol Gel ◽  
Annealing Process ◽  
Zno Thin Films ◽  
Rapid Thermal Annealing Process ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Thermal Annealing Process ◽  
Doped Zno

Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films

2011 ◽  
Vol 257 (6) ◽  
pp. 2341-2345 ◽  
Author(s):  
Tao Wang ◽  
Yanmei Liu ◽  
Qingqing Fang ◽  
Mingzai Wu ◽  
Xia Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Band Gap ◽  
Optical Band Gap ◽  
Zno Thin Films ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Doped Zno ◽  
Co Doped

Low temperature synthesis of Al doped ZnO thin films by facing target sputtering

2013 ◽  
Vol 228 ◽  
pp. S101-S106 ◽  
Author(s):  
Doo-Hoon Song ◽  
Kyung-Sik Shin ◽  
Youn-Joun Kim ◽  
Yoon-Seock Choi ◽  
In-Sik Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Zno Thin Films ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Facing Target Sputtering ◽  
Doped Zno

Low-temperature preparation of transparent conductive Al-doped ZnO thin films by a novel sol–gel method

2014 ◽  
Vol 49 (14) ◽  
pp. 4722-4734 ◽  
Author(s):  
Dongyun Guo ◽  
Kuninori Sato ◽  
Shingo Hibino ◽  
Tetsuya Takeuchi ◽  
Hisami Bessho ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Low Temperature Preparation ◽  
Doped Zno ◽  
Temperature Preparation

Fabrication and Sensing Properties of PSZT Thin Films for Micro-Force Sensors

2009 ◽  
Vol 60-61 ◽  
pp. 246-250
Author(s):  
Yan Cui ◽  
Hui Lin Chen ◽  
Er Lei Shi ◽  
Jia Xin Zhao ◽  
Li Ding Wang
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Dissipation Factor ◽  
Annealing Process ◽  
Dielectric Measurement ◽  
Si Substrate ◽  
Rapid Thermal Annealing Process ◽  
Pzt Thin Films ◽  
Thermal Annealing Process ◽  
Sensing Sensitivity

Pb1-xSrx (Zr0.53Ti0.47) O3 (PSZT) thin films have been fabricated on Pt/Ti/SiO2/Si substrate by a sol–gel method combined with a rapid thermal annealing process. The microstructure analysis of the thin films showed that the orientation ratio of (111) was 0.304，0.475 and 0.849 with x=0, 0.03, 0.08. The dielectric measurement suggested that the addition of Sr in Pb(Zr0.53Ti0.47) O3(PZT) thin films greatly improved the dielectric properties of PZT thin films. The dielectric constant for PZT thin films at a frequency of 2 kHz was 648，which was increased to 1239 when 3%at Sr was doped. Meanwhile, the dissipation factor was only increased from 0.02 to 0.03. Three kinds of piezoelectric micro-sensors have been prepared based on PSZT thin films and the sensing sensitivity of 0.017pc/uN, 0.033pc/uN, and 0.011pc/uN were realized as x increased, respectively. It indicated that micro-sensors with PSZT0.03 thin films showed better sensing property than other two.

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