Comment on “Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films”

2011 ◽  
Vol 257 (20) ◽  
pp. 8752-8753 ◽  
Author(s):  
Mingsong Wang
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Band Gap ◽  
Optical Band Gap ◽  
Zno Thin Films ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Doped Zno ◽  
Co Doped

Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films

2011 ◽  
Vol 257 (6) ◽  
pp. 2341-2345 ◽  
Author(s):  
Tao Wang ◽  
Yanmei Liu ◽  
Qingqing Fang ◽  
Mingzai Wu ◽  
Xia Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Band Gap ◽  
Optical Band Gap ◽  
Zno Thin Films ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Doped Zno ◽  
Co Doped

Low temperature synthesis of Al doped ZnO thin films by facing target sputtering

2013 ◽  
Vol 228 ◽  
pp. S101-S106 ◽  
Author(s):  
Doo-Hoon Song ◽  
Kyung-Sik Shin ◽  
Youn-Joun Kim ◽  
Yoon-Seock Choi ◽  
In-Sik Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Zno Thin Films ◽  
Low Temperature Synthesis ◽  
Temperature Synthesis ◽  
Facing Target Sputtering ◽  
Doped Zno

STRUCTURAL AND OPTICAL PROPERTIES OF UNDOPED AND SILVER, LITHIUM AND COBALT-DOPED ZnO THIN FILMS

2019 ◽  
Vol 27 (04) ◽  
pp. 1950138
Author(s):  
FATMA MEYDANERİ TEZEL ◽  
İ. AFŞIN KARİPER
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Refraction Index ◽  
Zno Thin Films ◽  
High Temperature Furnace ◽  
Doped Zno ◽  
Ray Patterns ◽  
Temperature Furnace

Undoped and silver, lithium and cobalt-doped ZnO thin films have been successfully deposited on glass by chemical bath deposition (CBD). The reaction temperature was 50∘C and the films were annealed at 400∘C for 4[Formula: see text]h in a high temperature furnace. UV/VIS spectrum was used to determine optical transmittance, optical band gap ([Formula: see text] and absorbance values of Ag:ZnO, Co:ZnO, Li:ZnO and undoped ZnO thin films. Optical band gap ([Formula: see text] and absorbance values of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were found as 0.0158, 0.0064, 0.2638, 0.0956 and 3.24, 3.13, 3.27, 2.96 eV, respectively. Extinction coefficients and refraction indexes of the films were found to be 0.0096, 0.0038, 0.0068, 0.019 (extinction coefficient) and 1.26, 1.14, 1.66, 2.33 (refraction index), respectively. X-ray patterns of undoped ZnO, Ag:ZnO, Co:ZnO and Li:ZnO thin films were confirmed as amorphous.

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

2013 ◽  
Vol 531 ◽  
pp. 430-435 ◽  
Author(s):  
Won Mok Kim ◽  
Jin Soo Kim ◽  
Jeung-hyun Jeong ◽  
Jong-Keuk Park ◽  
Young-Jun Baik ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Conduction Band ◽  
Optical Band Gap ◽  
Zno Thin Films ◽  
Impurity Doped ◽  
Doped Zno
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