Co-precipitation synthesis and AC conductivity of Sn0.94Zn0.04O2 nanoparticles, using impedance spectroscopy

2014 ◽  
Vol 25 (12) ◽  
pp. 5241-5247 ◽  
Author(s):  
R. Bargougui ◽  
Y. Ben Taher ◽  
A. Oueslati ◽  
F. Hlel ◽  
S. Ammar
2009 ◽  
Vol 470 (1-2) ◽  
pp. 497-501 ◽  
Author(s):  
Y.J. Wu ◽  
H.P. Fu ◽  
R.Y. Hong ◽  
Y. Zheng ◽  
D.G. Wei

2020 ◽  
Vol 27 (3) ◽  
pp. 919-927 ◽  
Author(s):  
Eldar T. Talgatov ◽  
Assemgul S. Auyezkhanova ◽  
Kuralai S. Seitkalieva ◽  
Nurmukhamet Zh. Tumabayev ◽  
Sandugash N. Akhmetova ◽  
...  

2014 ◽  
Vol 40 (1) ◽  
pp. 1519-1524 ◽  
Author(s):  
Lazhen Shen ◽  
Yongsheng Qiao ◽  
Yong Guo ◽  
Shuangming Meng ◽  
Guochen Yang ◽  
...  

2021 ◽  
Vol 904 ◽  
pp. 363-368
Author(s):  
Xiao Yan Zhou ◽  
Bang Sheng Yin

The 3 at% Al doped ZnO thin films were deposited on p-Si substrate with a native SiO2 layer by spray pyrolysis method. Low temperature conduction behaviors were studied by analysis of impedance spectroscopy and low temperature ac conductivity. The results of impedance spectroscopy showed that the grain boundaries contributed to the resistivity of Al doped ZnO/SiO2/p-Si heterojunction. The calculated activation energy was 0.073 eV for grain boundaries. The equivalent circuit to demonstrate the electrical properties of Al doped ZnO/SiO2/p-Si heterojunction was a series connection of two parallel combination circuits of a resistor and a universal capacitor. Low temperature ac conductivity measurements indicated that the conductivity increased with temperature. Low temperature conductivity mechanism was electron conductivity, and the activation energy was 0.086 eV.


Ionics ◽  
2014 ◽  
Vol 21 (4) ◽  
pp. 935-948 ◽  
Author(s):  
Marwa Krichen ◽  
Makram Megdiche ◽  
Kamel Guidara ◽  
Mohamed Gargouri

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