A study on electrical characterization and band offset of ITO/n-Si(111) heterojunction by pulsed laser deposition

2017 ◽  
Vol 28 (17) ◽  
pp. 13053-13057 ◽  
Author(s):  
Yapeng Li ◽  
Yingfeng Li ◽  
Yonghong Zhang ◽  
Juncai Hou ◽  
Wenyi Liu ◽  
...  
2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


1994 ◽  
Vol 349 ◽  
Author(s):  
M. P. Siegal ◽  
T. A. Friedmann ◽  
S. R. Kurtz ◽  
D. R. Tallant ◽  
R. L. Simpson ◽  
...  

ABSTRACTHighly tetrahedral-coordinated-amorphous-carbon (a-tC) films deposited by pulsed-laser deposition (PLD) on silicon substrates are studied. These films are grown at room-temperatures in a high-vacuum ambient. a-tC films grown in this manner have demonstrated stability to temperatures in excess of T = 1000°C, more than sufficient for any post-processing treatment or application. Film surfaces are optically smooth as determined both visually and by atomic-force microscopy. PLD growth parameters can be controlled to produce films with a range of sp2 - sp3 carbon-carbon bond ratios. Films with the highest yield of sp3 C-C bonds have high resistivity, with a dielectric permittivity constant s σ 4, measured capacitively at low frequencies (1 – 100 kHz). These a-tC films are p-type semiconductors as grown. Schottky barrier diode structures have been fabricated.


2010 ◽  
Author(s):  
K. Rodrigo ◽  
S. Heiroth ◽  
M. Lundberg ◽  
N. Bonanos ◽  
K. Mohan Kant ◽  
...  

2015 ◽  
Vol 70 (1) ◽  
pp. 10102
Author(s):  
Simeon Simeonov ◽  
Silvia Bakalova ◽  
Anna Szekeres ◽  
Ivaylo Minkov ◽  
Gabriel Socol ◽  
...  

1998 ◽  
Vol 83 (10) ◽  
pp. 5351-5357 ◽  
Author(s):  
Minoru Tachiki ◽  
Makoto Noda ◽  
Kenji Yamada ◽  
Takeshi Kobayashi

2013 ◽  
Vol 860-863 ◽  
pp. 807-811
Author(s):  
Wen De Liu ◽  
Zhen Feng Kang ◽  
Qiang Li ◽  
Ping Ping Zheng ◽  
Tie Zhu Ding

This study is focused on the elaboration of 8 mol.% yttria stabilized zirconia (YSZ) thin films onto porous supporting NiOYSZ anode substrates using pulsed laser deposition (PLD),and their microstructural and electrical characterizations. Better crystallinity and grain connectivity is observed increasing the deposition temperature until best values are obtained at 500°C. The greater relative conductivity enhancement is found at 300-500°C. The observed an increased conductivity at lower temperatures may be caused by a combination of nanoscaled effect of the YSZ thin film and interfacial effects between YSZ thin film and substrate.


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