Impact of surfactants on electrical conduction and preferred orientation of spray-pyrolysed nanostructured SnO2 thin films for LPG and ammonia sensing

2018 ◽  
Vol 29 (15) ◽  
pp. 13087-13102
Author(s):  
K. Prasanna Kumari ◽  
Boben Thomas ◽  
S. Deepa ◽  
Skariah Benoy
2021 ◽  
Vol 286 ◽  
pp. 129239
Author(s):  
Rahul Prajesh ◽  
Ravindra Kumar Jha ◽  
Vikas Saini ◽  
Mohd Nahid ◽  
Vinay Goyal ◽  
...  

1994 ◽  
Vol 102 (1183) ◽  
pp. 296-298 ◽  
Author(s):  
Isao YAGI ◽  
Katsutoshi KAKIZAWA ◽  
Kenji MURAKAMI ◽  
Shoji KANEKO

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-643-Pr8-650 ◽  
Author(s):  
M. Amjoud ◽  
F. Maury
Keyword(s):  

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.


2011 ◽  
Vol 324 (1) ◽  
pp. 98-102 ◽  
Author(s):  
Zhen Zhu ◽  
Jin Ma ◽  
Lingyi Kong ◽  
Caina Luan ◽  
Qiaoqun Yu
Keyword(s):  

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.


2013 ◽  
Vol 114 (18) ◽  
pp. 183713 ◽  
Author(s):  
G. Rey ◽  
C. Ternon ◽  
M. Modreanu ◽  
X. Mescot ◽  
V. Consonni ◽  
...  

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